Abstract: The recovery of rhodium, present as a homogeneous dissolved complex compound especially in residues of products of the oxo process, is carried out in a two-stage process. In the first stage, the residues are treated with a gas-containing oxygen in the presence of a C.sub.2 - to C.sub.4 - monocarboxylic acid and an alkali metal salt of a C.sub.2 - to C.sub.4 -monocarboxylic acid, and are then extracted with water. In the second reaction stage, they are treated again with a gas-containing oxygen, an aldehyde, a C.sub.2 - to C.sub.4 -monocarboxylic acid, and an alkali metal salt of a C.sub.2 to C.sub.4 monocarboxylic acid, and are extracted once more with water.

Abstract: Amino group-containing silicon compounds having at least two aromatic rings and hydrochlorides thereof are effective modifiers for composite materials for improving soldering heat resistance and heat shock resistance.

Abstract: The present invention is directed to tungsten halogen phosphine complex compounds having the formula W(PX.sub.3).sub.6-n L.sub.n wherein X is fluorine or chlorine, L is molecular nitrogen, acetone or other ketones or aldehydes, carbon monoxide, acetonitrile or other nitriles, diphenylethine or other ethines, diethylether or tetrahydrofurane or other open-chained or cyclic ethers, benzene or other aromatics, ethene or 1,5-cyclooctodiene or cycloheptatriene or other mono, di, or, respectively, triolefines, whereby two single-tooth ligands L can be replaced by one .mu..sup.4 -ligand or three single-tooth ligands L can be replaced by one .mu..sup.6 -ligand and n is a whole number from 0 to 5, as well as methods for the manufacture thereof. These substances are easily volatile in a vacuum and can be decomposed at extremely low temperatures and are therefore extremely well suited for CVD depositions in semiconductor technology, particularly, as via hole fillers in VLSI circuits.

Abstract: An improved process for making a bismuth carboxylate is disclosed which generally comprises (A) heating an anhydrous reaction mixture comprising a carboxylic acid or anhydride, bismuth metal, and hydrazine to a temperature of from about 80.degree. C. up to, but not including, the temperature of decomposition of any reactant, hydrazine, or the desired bismuth carboxylate, (B) bubbling an oxygen-containing gas through the reaction mixture during (A), and (C) removing water formed during (B) from the reaction mixture. Bismuth carboxylate compositions are also disclosed which contain at least 70 equivalents of a bismuth carboxylate derived from at least one carboxylic acid or anhydride having from about 6 to about 20 carbon atoms, the composition having a viscosity of not more than 1000 centipoise at 25.degree. C.

Abstract: A method for regenerating an oxidized photographic developer, which comprises bringing the oxidized photographic developer into contact with an adsorbent material which has affinity for the oxidation product of the developing agent or its derivatives and is substantially insoluble in the developer, and a method for regenerating an oxidized photographic developer, which comprises subjecting the oxidized developer to a contacting treatment with an adsorbent material which has affinity for the oxidation product of the developing agent or it derivatives and is substantially insoluble in the developer, and to an electrodialysis treatment using ion exchange membranes.