Abstract: Method for fabricating a solid state image sensor, which can improve a charge transfer efficiency of an end terminal, including the steps of (1) providing a first conduction type substrate having a second conduction type well and a BCCD formed therein for an end terminal, (2) continuously increasing impurity concentrations in a region of the substrate in which a floating diffusion region is to be formed and in a portion of an area of other substrate in which the regions are are to be formed for improving a horizontal charge transfer efficiency, and (3) forming transfer gates, an output gate, and reset gate on the substrate, and the floating diffusion region and a reset drain region in the BCCD, respectively.