Abstract: The invention defines a method for fabricating a semiconductor insulation layer: A semiconductor substrate is first provided; an insulation layer is applied by way of region-by-region or whole-area application to the semiconductor substrate; impurity ions are selectively implanted into at least one predetermined zone of the insulation layer; then the insulation layer is selectively etched, and the insulation layer is thereby patterned in accordance with the zone or zones of the selectively implanted impurity ions. Likewise, the present invention provides a method for fabricating a semiconductor component containing this semiconductor insulation layer.