Patents Examined by B. R. Holloway
  • Patent number: 4924475
    Abstract: A laser having a gain medium which includes boron oxide (BO) is shown to have an increased optical power output and to achieve other benefits from the addition of carbon tetrafluoride (CF.sub.4) to the gain medium. CF.sub.4, when mixed with BO, induces a vibrational relaxation of a BO(A.sup.2 .pi.) population to a single vibrational level without a significant quenching of the BO(A.sup.2 .pi.) state. The rate of vibrational relaxation induced by the CF.sub.4 additive occurs in an interval of time which is less than that associated with the radiative decay and quenching of the BO(A.sup.2 .pi.) state.
    Type: Grant
    Filed: January 23, 1989
    Date of Patent: May 8, 1990
    Assignee: United Technologies Corporation
    Inventor: John J. Hinchen
  • Patent number: 4873697
    Abstract: A narrowband laser transmitter which has a semiconductor laser and an external optical resonator coupled to the semiconductor laser so that the output power of the transmitter can be taken from the resonator, characterized by the laser transmitter being both a micro-optical realization or implementation as well as executed with a free beam propagation. To this end, the resonator is composed of an optical grating arrangement arranged in the beam path of the laser emission from the semiconductor laser and this optical grating arrangement will conduct one part of the supplied laser emission back to the semiconductor laser while conducting the other or second part of the emission to a coupling location at which the other part can be taken as the output power of the transmitter.
    Type: Grant
    Filed: July 23, 1987
    Date of Patent: October 10, 1989
    Assignee: Siemens Aktiengesellschaft
    Inventors: Klaus M. Haeussler, Julius Wittmann, Gisela Gaukel, Franz Auracher
  • Patent number: 4866727
    Abstract: The discharge chamber (LC) of a laser includes a multiple electromagnetic screen in the form of a plurality of vessels (1 and 3 respectively) located one within the other.
    Type: Grant
    Filed: November 13, 1987
    Date of Patent: September 12, 1989
    Assignee: The European Atomic Energy Community
    Inventor: Johannes W. Van Dijk
  • Patent number: 4847669
    Abstract: An improved tandem photoelectric conversion device is shown. The device comprises at least two photoelectric conversion semiconductor assemblies. The assembly located behind the other has higher crystallinity then the other, so that light with a long wavelength passing through the front assembly be converted into electricity at the back assembly. In the device, an intrinsic semiconductor layer is formed by an ECR CVD system.
    Type: Grant
    Filed: December 17, 1986
    Date of Patent: July 11, 1989
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Masayoshi Abe, Susumu Nagayama, Kunio Suzuki, Takeshi Fukada, Mikio Kinka, Katsuhiko Shibata, Masato Susukida