Abstract: A laser processing machine nozzle is disclosed. The nozzle tip is detachably secured to the laser head of a laser processing machine. The nozzle tip is urged to remain in a fixed position relative to the laser head, but may be displaced by forces such as would be generated by a collision of the nozzle with an obstruction. An improved laser processing machine utilizing such a nozzle is also disclosed.

Abstract: High quantum efficiency photodiode device having a pair of photodiodes with light receiving surfaces in parallel spaced relation in a closed cavity. Light is admitted to the cavity through an aperture in such manner that it impinges obliquely upon the light receiving surfaces and is reflected back and forth between the diodes until absorbed. A mirror positioned at the end of the diodes opposite the aperture reflects impinging thereon back to the photodiodes.

Abstract: A method for enhancing the lasing action in a chemical oxygen iodine laser wherein a gas stream having a desired reactant gas concentration profile is combined with a diluent gas concentration profile using hydrogen as the diluent gas.

Abstract: A plurality of thin wall ceramic-metal segments are brazed together to form a gas laser tube assembly. Within each segment there is mounted a ferrule with a central hole. The series of holes formed in the ferrules define the discharge bore and gas return paths are formed in the wall of structure supporting the ferrules.

Abstract: There is disclosed a light emitting device comprising at least a semiconductor laser and an optical modulating element for modulating the output light from the semiconductor laser. In accordance with the present invention, a capacitive element for suppressing noise of the semiconductor laser arising from reflected light is disposed in parallel relation to current injection terminals of the semiconductor laser.

Abstract: A gas laser oscillator having a gas flow smoothing device, preferably made of a cylindrical mesh, installed in the gas inlet of the electrical discharge region of the oscillator.

Abstract: A semiconductor laser array device comprising two or more array portions, which are composed of a plurality of main parallel waveguides with an optical phase coupling in between, and one or more branching portions, each of which is positioned between the array portions and which are composed of two branching waveguides branching symmetrically with regard to the main waveguide direction from each of the main parallel waveguides of the array portions, each of the two branching waveguides positioned at the outer sides of each of the branching portions being disconnected with the adjacent branching waveguides and the other branching waveguides from the main parallel waveguides of one of the array portions being optically connected with the corresponding branching waveguides from the main parallel waveguides of the adjacent array portion.

Abstract: A gas laser which has transverse high frequency exitation and which is improved in efficiency and in power density by the use of a coupling structure which assures a roughly positional independent electrical field strength for each neutral particle density in the full discharge space and this is accomplished with capacitance electrodes (2) between which the discharge space of a laser are arranged in a cavity resonator and wherein the mutual spacings between the capacitive electrodes (2) are positionally dependent and are selected such that they assure that an electrical field strength proportional to the neutral particle density occurs.

Abstract: A high frequency cross-flow gas laser has a tubular conduit divided into a multiplicity of gas flow sections with gas inlets adjacent each of the mirrors therein and outlets therebetween. A pair of electrodes is provided along each flow section to produce a high frequency electrical discharge in the lasing gas mixture, and a cooler is used to chill the gas withdrawn from the conduit for recycling thereto. The electrode pairs are desirably radially rotated relative to one another to produce uniformity of the energy discharge across the cross-section of the lasing gas mixture.

Abstract: A semiconductor laser having such a structure that a laser structure including a laser active region of multi quantum well structure, cladding layers and a cap layer is formed on a substrate, is disclosed in which both end regions of the laser active region in the quantum well layer is converted into mixed crystal by impurity induced intermixing so that a multi quantum well active region is sandwiched between mixed crystal regions, and impurity diffused regions are formed between the surface of the crystal and the mixed crystal regions, to form a current path and to inject carriers into the multi quantum well region in a direction parallel to the laser active layer. Thus, the semiconductor laser can modulate laser oscillation at a very high frequency, and moreover is readily fabricated or integrated.

Abstract: A seeded electro-optically Q-switches laser includes a pulser for pulsing the Q-switch within the seeded laser. The Q-switch pulser includes a pulse-shaping network having a saturable core inductor connected in series with the flow of current to the Q-switch for causing the developed pulse voltage waveform in Q-switch to have an initially reduced rate of change to reduce unwanted Fourier frequency components of the seed optical radiation in the optical resonator of the slave laser, whereby enhanced single-mode operation of the slave laser is obtained with reduced seed power.

Abstract: A dye laser system especially useful for generating short pulses in response to excitation laser pulses directed to an appropriate dye contained between opposing mirrors that form a short cavity within a small, easily replaceable cell. The spacing of the mirrors is adjustable by application of a force from outside of the cell, thereby allowing control of the frequency of the laser output. The cell is self-contained, including a dye reservoir maintained in continuous liquid communication with the cavity for providing fresh dye to it.

Abstract: An RF excited gas discharge laser (10) is operated by an RF exciting power supply (12,14) having a frequency established at the selected pumping frequency of the laser. This pumping frequency is displaced from the resonant frequency of the laser itself and is provided via an impedance matching circuit (16) from the output of a high power amplifier (14) to which is fed the relatively low power output of the RF oscillator (12) of the power supply. The required starting voltage, of magnitude greater than the magnitude of the laser running voltage, is provided to ignite the laser by momentarily shifting the frequency of the RF oscillator to a frequency substantially the same as the resonant frequency of the laser and shifting the oscillator frequency back to its normal pumping frequency after laser ignition.

Abstract: A laser flash lamp triggering circuit is connected in parallel with the flash lamp and between the flash lamp and the flash lamp power supply. A impedance element is connected between the parallel trigger circuit network and the pulse forming network in the power supply. The impedance element preferably in the form of a saturable reactor has a high impedance to the high voltage trigger pulse and a low impedance to the current flow from the storage capacitor forming part of the pulse forming network. This invention relates to a laser flash lamp power supply and, more particularly, a triggering circuit for the flash lamp which has low power dissipation.

Abstract: A plurality of supply voltages are supplied form a power supply to a semiconductor laser drive device. One of these supply voltages is applied to a discrimination circuit. The discrimination circuit includes a first zener diode, to which one of the supply voltages is applied, and which has a zener breakdown voltage corresponding to the lower limit of a threshold voltage range, and a second zener diode, to which the same supply voltage is applied, and which has a zener breakdown voltage corresponding to the upper limit of the threshold voltage range. First and second light-emitting diodes are connected in series with the respective first and second zener diodes. Light emitted from the first and second light-emitting diodes is received by respective first and second phototransistors connected in series between a voltage supply terminal and a ground terminal. A resistor is connected in parallel with the second phototransistor connected to the ground terminal.

Abstract: An integrated semiconductor source of high-power, single spatial mode, narrow spectral mode modulated radiation. A frequency selective feedback laser diode is disposed on the same semiconductor crystal with a power amplifier having a diverging active area which causes emitted light to be distributed over a large exit facet area.

Abstract: A semiconductor laser array having laser active strips optically coupled to one another, wherein only every second laser active strip emits laser energy so that one main emission lobe appears.

Abstract: A gas laser has (1) a reflecting body with a reflecting surface, (2) excitation space structure cooperative with the reflecting body for defining an excitation space which is open opposite the reflecting surface of the reflecting body, (3) devices for lasingly exciting a gas in the excitation space and (4) a mirror assembly. The mirror assembly has a mirror having a reflecting surface facing the opening in the excitation space. A radial flange is about the mirror with the reflecting surface of the mirror on one axial side of the radial flange. At least one spacer and, preferably three, circumferentially-spaced bars project from the excitation space structure and engage the radial flange substantially axially for supporting it at least one of axially slidably and tiltably. Bellows sealingly connect the one axial side of the radial flange to the opening of the excitation space structure and its other axial side to a backplate immovably connected to the spacer bar on the other axial side of the radial flange.

Abstract: A temperature controller unit for use in a gas laser resonator structure using a gas lasing medium excited within a resonator cavity having reflective optical surfaces for producing a beam of coherent radiation, and the gas lasing medium being circulated through a heat exchanger to maintain a predetermined lasing temperature range. The temperature controller unit includes a tubular member of substantial length forming a primary chamber for conducting said gas lasing medium through the heat exchanger in a non-contaminating environment to reduce gas contaminate buildup on the optical surfaces in the resonator cavity, end caps sealably closing the ends of the tubular member and receiving gas lasing medium from the resonator structure, and an outlet tube having an open end positioned within the primary chamber for conveying the gas lasing medium for recirculation to the resonator structure.

Abstract: An RF laser structure (10) is disclosed which includes an elongated laser excitation cavity (27) and an electrode structure (20) for suppressing extraneous RF discharges outside of the laser cavity. The electrode structure includes an electrode (41) adjacent the elongated laser cavity (27) and extending along the laser cavity; a conductive structure (43, 45) adjacent and conductively coupled to the electrode (41) for shielding the electrode and for providing smooth conductive surfaces; and a dielectric filler (47) encapsulating the electrode and the conductive structure, and for controlling the electric field generated by the electrode structure so that extraneous discharges are suppressed. Also disclosed is a method for making a laser electrode structure which includes the steps of forming an electrode adjacent the elongated laser cavity, and encapsulating the electrode with a dielectric potting material.