Abstract: An optical sensor is provided, comprising (a) a silicon nanowire of finite length having an electrical contact pad at each end thereof; and (b) a plurality of self-assembled molecules on a surface of the silicon nanowire, the molecules serving to modulate electrical conductivity of the silicon nanowire by either a reversible change in dipole moment of the molecules or by a reversible molecule-assisted electron/energy transfer from the molecules onto the silicon nanowire. Further, a method of making the optical sensor is provided. The concept of molecular self-assembly is applied in attaching functional molecules onto silicon nanowire surfaces, and the requirement of molecule modification (hydroxy group in molecules) is minimal from the point view of synthetic difficulty and compatibility. Self-assembly will produce well-ordered ultra-thin films with strong chemical bonding on a surface that cannot be easily achieved by other conventional methods.

Abstract: A light emitting element includes a light emitting portion emitting light by the supply of electric power thereto, an enclosing portion having electrical conductivity and having the light emitting portion enclosed therein, first and second electrode layers formed on the two opposed surfaces of the enclosing portion and to which electric power for causing the light emitting portion to emit light is supplied, and an opening hole formed in at least one of the first and second electrode layers and permitting the light emitting portion to be observed through the enclosing portion from a direction which is not affected by a beam emitted from the light emitting portion. The specification also discloses a method of manufacturing such a light emitting element.

Abstract: A group III-V type nitride compound semiconductor device with superior characteristics and a method of readily manufacturing the same are provided. The group III-V type nitride compound semiconductor device has a metal nitride layer, an n-type contact layer, an n-type clad layer, a light emitting layer, a p-type clad layer and a p-type contact layer successively formed on an insulating substrate which has an opening in which an n-type electrode 8a is formed in contact with the metal nitride layer. A p-type electrode 9 is formed on the p-type contact layer 7. The area of the electrode closer to the substrate can be increased without degrading the mechanical strength of the substrate, and the operating voltage of the semiconductor device can thus be reduced.

Abstract: A semiconductor component has a semiconductor body with at least one integrated lateral resistor. The lateral resistor is formed with a dopant concentration in the resistor region. The resistor region is located in a region which is accessible from the surface of the semi-conductor component and it has a defined dopant concentration. Scattering centers are provided in the region of the lateral resistor which reduce a temperature dependency of the lateral resistor.

Abstract: In one form of the invention, an emitter structure for a bipolar transistor is disclosed. The structure is comprised of an emitter layer 6 of Al.sub.x Ga.sub.1-x As, where x>0.4, abutting a base layer 8.

Abstract: An optoelectronic device (10) formed in a chip of an indirect bandgap semiconductor material such as silicon is disclosed and claimed. The device comprises a visibly exposed highly doped n.sup.+ region (16) embedded at the surface of an oppositely doped epitaxial layer (14), to form a first junction region (15) closed to the surface of the epitaxial layer. When the junction region is reverse biased to beyond avalanche breakdown, the device acts as a light emitting device to the external environment. When it is reversed biased to just below avalanche breakdown it acts as a light detector. The device may further include a further junction region for generating or providing additional carriers in the first junction region, thereby to improve the performance of the device. This further junction can be multiplied to facilitate multi-input signal processing functions where the light emission from the first junction is a function of the electrical signals applied to the further junctions.