Abstract: The formation of lightly doped regions under a gate of a transistor via gate autodoping is disclosed. One embodiment of the invention is a method having four steps. In the first step, a gate having two sidewalls is provided over a gate oxide over a semiconductor substrate; source and drain regions with the substrate adjacent to the sidewalls of the gate are also provided. In the second step, the gate oxide is etched to reduce the length of the gate oxide. In the third step, a spacer is formed at each sidewall of the gate to create at each side of the gate oxide an air cavity defined by the spacer, the gate, the substrate and the gate oxide. In the fourth step, a rapid thermal anneal is performed to form lightly doped regions within the substrate, as autodoped from the gate.

Abstract: A magnetic tunnel junction (MTJ) of the type using soft (low magnetic coercivity) and hard (high magnetic coercivity) ferromagnetic layers separated by an insulating tunnel barrier (a hard/soft MTJ device) is stable without loss of magnetization after repeated cycling of its magnetic state. The MTJ device is based on the discovery that the mechanism of demagnetization in a hard/soft MTJ device is via coupling of the hard ferromagnetic layer to the soft ferromagnetic layer via the formation and motion of domain walls in the soft ferromagnetic layer. The MTJ device includes adjacent ferromagnetic structures that provide a transverse biasing magnetic field to the soft ferromagnetic layer. The transverse biasing field permits coherent rotation of the magnetic moment of the soft ferromagnetic layer without the formation of magnetic domains when suitable switching fields are applied.