Patents Examined by Barry J. Hollander
  • Filamentary silicon carbide crystals by VLS growth in molten iron
    Patent number: 4013503
    Abstract: A method of growing silicon carbide whiskers from a gaseous phase by means of a vapor-liquid-solid mechanism on a substrate using iron in a finely divided state as a solvent for the silicon carbide.
    Type: Grant
    Filed: July 25, 1975
    Date of Patent: March 22, 1977
    Assignee: North American Philips Corporation
    Inventors: Wilhelmus Franciscus Knippenberg, Gerrit Verspui