Abstract: Methods of forming integrated circuit capacitors include the steps of forming a capacitor comprising first and second electrodes and a dielectric layer between the first and second electrodes, on a substrate. A step is then performed to expose at least one of the dielectric layer and the second electrode to an ECR plasma for a duration of sufficient length to improve charge leakage characteristics of the integrated circuit capacitor. The dielectric layer may comprise STO, BST, PZT, SBT PLZT and BTO, for example. This exposing step may include the step of selectively exposing the second electrode, but not the ferroelectric dielectric layer, to the ECR plasma. The exposing step also preferably includes simultaneously maintaining the substrate at a temperature below about 700.degree. C.