Abstract: Disclosed herein is an apparatus having a double wiper structure for sterilizing ballast water. Each wiper for use in removing foreign substances from an ultraviolet lamp has a double structure including a main wiper part and auxiliary wiper parts. The auxiliary wiper parts are disposed on opposite sides of the main wiper part so that when the wiper body is moved forward or backward, the corresponding auxiliary wiper part primarily removes foreign substances before the main wiper part wipes the ultraviolet lamp unit. Each auxiliary wiper part includes an inclined protrusion and a pointed part so that friction between the surface of the ultraviolet lamp and the auxiliary wiper part can be minimized. The main wiper part includes a first blade and a second blade that are respectively disposed on opposite sides of a depression formed in an inner circumferential surface of the main wiper part.

Abstract: In one embodiment, an analytical apparatus is provided that includes a carriage; and a plurality of electrospray probes pivotably mounted on the carriage, wherein movement of the carriage engages a feature with a selected one of the electrospray probes whereby movement of the feature pivots the selected one of the electrospray probes with respect to the carriage.

Abstract: An object of the present invention is to provide an ion implantation method for shortening a down time of an ion implantation apparatus after exposure of a chamber and for improving throughput and a method for manufacturing a semiconductor device. Specifically, the object of the invention is to provide an ion implantation method that can improve throughput during an ion implantation step of B and a method for manufacturing a semiconductor device. The ion implantation method comprises the steps of: introducing an impurity imparting p-type conductivity and H2O in an ion source; ionizing the impurity imparting p-type conductivity; and implanting into a semiconductor film.

Abstract: A multi-purpose efficient charge particle detector that by switching bias voltages measures either secondary ions, or secondary electrons (SE) from a sample, or secondary electrons that originate from back scattered electrons (SE3), is described. The basic version of the detector structure and two stripped down versions enable its use for the following detection combinations: The major version is for measuring secondary ions, or secondary electrons from the sample, or secondary electrons due to back-scattered electrons that hit parts other than the sample together or without secondary electrons from the sample. Measuring secondary ions or secondary electrons from the sample (no SE3). Measuring secondary electrons from the sample and/or secondary electrons resulting from back-scattered electrons hitting objects other than the sample (no ions).

Abstract: The invention includes an ion mobility spectrometer having a liquid filled drift chamber. The chamber has an ionization region partitioned from and an ion separation region by a reversible ion-migration block. An electrical field within the chamber allows ions to migrate toward the electrode collector. Passage of ions from the ionization region is triggered by reversing the block allowing ions to migrate into the ion separation region. The invention includes a method of ion mobility analysis in liquid phase. Ions are mobilized to migrate through a drift liquid and are detected at an end of a drift chamber. The invention also includes a method of generating ions in a sample. A sample containing molecules in a first solvent is introduced into a second solvent through a charged capillary where the electrically charged sample is electro-disperses to ionize the molecules.

Abstract: A focused ion beam apparatus and a focused ion beam irradiation method are disclosed. Even in the case where a magnetic field exists on the optical axis of an ion beam and the particular magnetic field undergoes a change, the ion beam is focused without separating the isotopes on the sample at the same ion beam spot position as if the magnetic field is not existent. A canceling magnetic field is generated on the optical axis of the ion beam from a canceling magnetic field generator thereby to offset the deflection of the ion beam due to the external magnetic field.

Abstract: As measurement accuracy required for the scanning electron microscope (SEM) for measuring a pattern width becomes stringent, a technique of reducing the difference in a measured dimension between the SEM's is desired. However, the conventional technique of evaluating the difference in a measured dimension between the SEM's cannot separate the difference in a measured dimension between the SEM's themselves and a dimensional change resulting from deformation of the pattern itself. Moreover, the technique of reducing the difference in a measured dimension between the SEM's needs an operator for reducing the difference in a measured dimension between the SEM's for each measurement pattern shape.

Abstract: A laser desorption ion source provides enhanced ion sampling efficiency and measurement sensitivity by using one or more ion guides to effectively capture ions in a plume emitted from the ion target and guide the ions through an aperture into a downstream vacuum chamber. In one configuration using two RF multipole ion guides, a first RF multipole ion guide disposed next to the ion target is selected to be sufficiently large to capture a substantial portion of the plume, while the second RF multipole ion guide disposed between the first multipole ion guide and the aperture has a smaller dimension to assist focusing of ions into the aperture. The first RF multipole ion guides the ions in the plume into the second RF multipole ion guide, which then focuses the ions so that they pass through the aperture into the downstream vacuum chamber.

Abstract: A lithographic apparatus is disclosed. The apparatus includes a projection system configured to project a first radiation beam onto a target portion of a substrate, and at least one monitoring device for detecting contamination in a interior space. The monitoring device includes at least one dummy element having at least one contamination receiving surface. In an aspect of the invention, there is provided at least one dummy element which does not take part in transferring a radiation beam onto a target portion of a substrate, wherein it is monitored whether a contamination receiving surface of the dummy element has been contaminated.

Abstract: A therapy system using an ion beam, which can shorten the time required for positioning a couch (patient). The therapy system using the ion beam comprises a rotating gantry provided with an ion beam delivery unit including an X-ray tube. An X-ray detecting device having a plurality of X-ray detectors can be moved in the direction of a rotation axis of the rotating gantry. A couch on which a patient is lying is moved until a tumor substantially reaches an extension of an ion beam path in the irradiating unit. The X-ray tube is positioned on the ion beam path and the X-ray detecting device is positioned on the extension of the ion beam path. With rotation of the rotating gantry, both the X-ray tube emitting an X-ray and the X-ray detecting device revolve around the patient. The X-ray is emitted to the patient and detected by the X-ray detectors after penetrating the patient. Tomographic information of the patient is formed based on signals outputted from the X-ray detectors.

Abstract: A MEMS mass spectrometer having metal walls connected between a lid and base, with the walls defining a plurality of interior chambers including sample gas input chambers, an ionizer chamber, a plurality of ion optics chambers and a ion separation chamber. A detector array at the end of the ion separation chamber includes a plurality of V-shaped detector elements positioned along two parallel lines and arranged to intercept all of the ionized beams produced in the mass spectrometer.

Abstract: The invention relates to a method for the continuous determination of the damage to at least one system (7) used for the post-treatment of exhaust gases from an internal combustion engine (2), caused by the lubricating oil, the fuel and/or at least one lubricating oil additive and/or fuel additive used.

Abstract: A system for controlling an electrostatically induced liquid spray includes an electrostatic spray device for generating a liquid spray from a liquid sample; a spray current sensing means placed in relation to the spray device and configured to generate a current output signal that represents a current of the liquid spray; and a mechanism that receives the current output signal and compares it to a pre-selected current value, with a difference between the two representing a control signal that is sent to one of (1) a pump that regulates the flow rate of the liquid sample and (2) a power supply to regulate an electric field associated with the spray device that generates the liquid spray according to a set level of current.

Abstract: A probe of a scanning probe microscope having a sharp tip and an increased electric characteristic by fabricating a planar type of field effect transistor and manufacturing a conductive carbon nanotube on the planar type field effect transistor. To achieve this, the present invention provides a method for fabricating a probe having a field effect transistor channel structure including fabricating a field effect transistor, making preparations for growing a carbon nanotube at a top portion of a gate electrode of the field effect transistor, and generating the carbon nanotube at the top portion of the gate electrode of the field effect transistor.

Abstract: An improved HE LINAC-based ion implantation system is disclosed utilizing direct digital synthesis (DDS) techniques to obtain precise frequency and phase control and automated electrode voltage phase calibration. The DDS controller may be used on a multi-stage linear accelerator based implanter to digitally synchronize the frequency and phase of the electric fields to each electrode within each stage of the accelerator. The DDS controller includes digital phase synthesis (DPS) circuits for modulating the phase of the electric field to the electrodes, and a master oscillator that uses digital frequency synthesis or DFS to digitally synthesize a master frequency and phase applied to each of the DPS circuits. Also disclosed are methods for automatically phase and amplitude calibrating the RF electrode voltages of the stages.

Abstract: An apparatus with means for controlling ion generation is discussed. The apparatus comprises a plurality of ion sources, at least one counter electrode mounted downstream for the ion sources and at least one ion controlling element mounted relative to at least one of the ion sources. Each ion controlling element is alternated between a first condition where the operation of at least one of the ion sources is enabled and a second condition where the operation of at least one of the ion sources is disabled. This concept may also be extended to an ion source apparatus having a single ion source with an ion lens mounted relative thereto. The present invention also provides a method for controlling the operation of the aforementioned apparatus. The invention further provides an apparatus and a method for the generation of ion pulses.

Abstract: A particle beam therapy system comprises a charged particle beam generator for generating a charged particle beam, two or more treatment rooms provided with respective irradiation devices for irradiating the charged particle beam, a beam line for transporting the charged particle beam extracted from the charged particle beam generator to the irradiation device in selected one of the two or more treatment rooms, a beam detection processing/control unit for monitoring a beam state of the charged particle beam in one of the two or more irradiation devices, and a selector for switchably selecting one of the irradiation devices which is to be monitored by the beam detection processing/control unit. The selector is controlled such that the selector establishes connection with the irradiation device in the selected one treatment room to which the charged particle beam is transported through the beam line. The system configuration can be simplified while maintaining the operation efficiency.

Abstract: Some embodiments include reception of a first instruction to enter an imaging mode, and, in response to the first instruction, automatic performance of at least one of: reduction of a focal spot size of a radiation beam, movement of a flattening filter out of a path of the radiation beam, replacement of a first target for photon emission with a second target for photon emission, or movement of a scatter-reducing filter into the path of the radiation beam. Embodiments may further include reception of a second instruction to enter a first radiation treatment mode, and, in response to the second instruction, automatic performance at least one of: increase of a focal spot size of the radiation beam, movement of the flattening filter into the path of the radiation beam, replacement of the second target with the first target, or movement of the scatter-reducing filter out of the path of the radiation beam.

Abstract: An exposure system includes a mask stage module adapted for holding a first mask and a second mask, wherein the first mask is configured for illumination by a first beam to form a transformed first beam having a first pattern from the first mask and the second mask is configured for illumination by a second beam to form a transformed second beam having a second pattern from the second mask. The exposure system also includes a beam combiner configured to combine the transformed first and second beams to form a resultant beam, wherein the resultant beam is projected into a substrate coated with a photoresist layer.

Abstract: When the electrode potential of a charge control electrode above a wafer is reduced, image brightness is reduced. A point of change in the image brightness is a switching point between a positively charged state of the image and a negatively charged state of the image, showing the weakly charged state of the image. By setting this point of change as an inspecting condition, the amount of electric charges on the surface of the wafer can be reduced, and stable wafer inspection can be performed. It is estimated that an applied voltage V1 in FIG. 14 corresponds to the point of the change and is roughly included in the voltage range of a region enclosed by a broken line in the vicinity of the applied voltage V1. Within this voltage range, the influence of charge on an inspection under the inspecting condition can be reduced.