Patents Examined by Bhavesh Metha
  • Photomask evaluation based on lithographic simulation using sidewall angle of photomask pattern
    Patent number: 8189903
    Abstract: According to an aspect of the invention, there is provided a photomask evaluation method including, acquiring a pattern image of a photomask, generating sidewall angle data on the sidewall angle of a pattern from the pattern image, extracting a pattern outline from the pattern image to generate outline data, and running a lithographic simulation on the basis of the outline data and the sidewall angle data to calculate an exposure margin.
    Type: Grant
    Filed: December 11, 2006
    Date of Patent: May 29, 2012
    Assignee: Kabushiki Kaisha Toshiba
    Inventor: Masamitsu Itoh