Abstract: Compositions useful for the selective removal of silicon germanium materials relative to germanium-containing materials and silicon-containing materials from a microelectronic device having same thereon. The removal compositions include at least one diol and are tunable to achieve the required SiGe:Ge removal selectivity and etch rates.

Abstract: A method of patterning a substrate includes forming spaced first features over a substrate. Individual of the spaced first features include sidewall portions of different composition than material that is laterally between the sidewall portions. A mixture of immiscible materials is provided between the spaced first features. At least two of the immiscible materials are laterally separated along at least one elevation between adjacent spaced first features. The laterally separating forms a laterally intermediate region including one of the immiscible materials between two laterally outer regions including another of the immiscible materials along the one elevation. The laterally outer regions are removed and material of the spaced first features is removed between the sidewall portions to form spaced second features over the substrate. Other embodiments are disclosed.

Abstract: A method for combinatorially processing a substrate is provided. The method includes introducing a first etchant into a reactor cell and introducing a fluid into the reactor cell while the first etchant remains in the reactor cell. After initiating the introducing the fluid, contents of the reactor cell are removed through a first removal line and a second removal line, wherein the first removal line extends farther into the reactor cell than the second removal line. A level of the fluid above an inlet to the first removal line is maintained while removing the contents. A second etchant is introduced into the reactor cell while removing the contents through the first removal line and the second removal line. The method includes continuing the introducing of the second etchant until a concentration of the second etchant is at a desired level, wherein the surface of the substrate remains submerged.