Abstract: Disclosed herein is abrasives consisting of fine particles of fluorinated silicon oxide which do not contain alkali metal and methods of thier manufacture, and high yield and high reliability methods of manufacturing semiconductor devices by the use of these abrasives. The abrasive comprises a solution in which fine particles of fluorinated silicon oxide are dispersed is formed by addition of boric acid to an aqueous solution of hydrosilicofluoric acid or addition of pure water to an alcohol solution of alkoxyfluorosilane. By the use of these abrasives, a layer insulating film for multi-layer wiring can be flattened.

Abstract: A method of self aligning an emitter contact includes forming a base layer (18) on a portion of a collector layer (16). An interface layer (22) is formed on the base layer (18) such that a portion of the base layer (18) remains exposed. An emitter layer (24) is formed on the collector layer (16), the interface layer (22), and the exposed portion of the base layer (18). An emitter cap layer (26) is formed on the emitter layer (24) over the previously exposed area of the base layer (18). An insulating layer (28) is formed on the interface layer (22). An emitter contact (36) is formed on the emitter cap layer (26) at the previously exposed area of the base layer (18). The insulating layer (28) isolates the emitter contact (36) from the base layer (18) and a subsequently formed base contact (38). The insulating layer (28) ensures isolation between the emitter contact ( 36) and the base contact (38) despite misalignment of the emitter contact (36) during formation.

Abstract: A capped MMIC and method of making same wherein a polymer layer cast over the surface of a semiconductor wafer and vias are formed in the polymer layer down to the wafer surface. The exposed surface of the polymer layer is then metallized and etched in a predetermined pattern to provide a metal pattern over the upper surface of the polymer layer which extends into the vias and to the surface of the wafer. Pads of the metallization are also provided on the upper surface of the polymer layer which are individually electrically isolated from the remainder of the metallization. The wafer is now ground back and backside metallization and other desired processing then takes place in standard manner to complete fabrication of the individual MMICs on the wafer. The MMICs are then diced in standard manner. The MMICs can be secured in a housing fabricated of ceramic or metal. The housing has a plurality of cavities, each cavity for receipt of a MMIC or MMICs.

Abstract: Improved transportation accuracy of a lead frame and reduced transportation time is attained. On the both sides of a heat block (1), rails (3a) equipped with a vertical drive mechanism are provided. By rotation of a screw shaft (7), a lead frame (4) is moved from front side to rear side of the heat block (1) along guide rails (3b) and the movable rails (3a) while holding the lead frame (4) by a clamp (5c) which has freedom of horizontal and vertical movements. During this transportation, a sensor (8) detects the position of the lead frame (4). A frame presser member (2) is mounted above the heat block (1) and equipped with a vertical drive mechanism for pressing the lead frame (4) against the heat block (1). The lead frame (4) is fed to a predetermined point by one motion of the clamp (5c) while firmly held by the clamp (5c) without frictionally contacting the heat block (1).

Abstract: An integrated circuit device is disclosed. The device includes a first leadframe power supply bus and a second leadframe power supply bus that each have portions separate from and adjacent to one another that lie between a first plurality of leadfingers and a second plurality of leadfingers. An electronic device is connected to the first leadframe power supply bus and to the second leadframe power supply bus. Another electronic device can be connected to the first leadframe power supply bus and to the second leadframe bus. Exemplary of the electronic devices are a de-coupling capacitor and a capacitor for high frequency noise suppression. A semiconductor die is attached to the power supply busses. A substance encapsulates the components so that an integrated semiconductor chip is formed. A method of making an integrated circuit device is also disclosed.

Abstract: A method of gettering heavy metal impurities from p-type silicon substrates comprises the prior step of forming an intrinsic gettering layer covered with a surface denuded zone in the silicon substrate by subjecting the substrate to heat treatments which form the intrinsic gettering layer having a large density of crystal microdefects compared to the density of crystal microdefects in the denuded zone; then the step of performing most of the required wafer processes other than the step of forming a metal layer; and subsequently the gettering step of heating the silicon substrate to a predetermined temperature and simultaneously irradiating the substrate with light rays, the predetermined temperature being selected to be within the temperature range 150.degree. C. to 220.degree. C., preferably around 200.degree. C.

Abstract: A metal-to-polysilicon capacitor, a floating-gate transistor containing such a capacitor, and a method for making the same is disclosed. The bottom plate of the capacitor is formed over a field oxide structure, and the multilevel dielectric is deposited thereover. The multilevel dielectric is removed from the capacitor area, and an oxide/nitride dielectric is deposited over the exposed bottom plate and over the multilevel by way of LPCVD. A first layer of titanium/tungsten is preferably deposited prior to contact etch, and the contacts to moat and unrelated polysilicon are formed. Metallization is sputtered overall, and the metal and titanium/tungsten are cleared to leave the metallization filling the contact holes, and a capacitor having a titanium/tungsten and metal top plate.

Abstract: A method is provided for manufacturing a master slice semiconductor integrated circuit device. Initially, a first total circuit diagram which is to be reformed into a master slice semiconductor integrated circuit device is defined. First and second circuit points on the first total circuit block which are to be used respectively as input and output terminals of the master slice semiconductor integrated circuit device are specified. Next, signal transmitting paths are successively traced from the output to the input of each logic gate located in the signal transmitting paths in actual use. In the course of the tracing, these traced gates are marked and the logic gates actually in use are identified. As a result, in addition to those logic gates having unused output terminals, the gates constituting a closed loop isolated from the signal transmitting paths for transmitting substantial output signals are identified as unnecessary gates and deleted.

Abstract: Silicon dioxide is deposited by low pressure chemical vapor deposition (LPCVD) from dichlorosilane plus nitrous oxide, using a larger concentration of dichlorosilane than of nitrous oxide.

Abstract: In a lithium secondary battery having lithium ion electrical conductive electrolyte, a positive electrode and a negative electrode, the negative electrode being formed by a Li-Ga-In alloy.

Abstract: A method for planarizing a semiconductor slice prior to its metallization is disclosed. The semiconductor slice is processed so as to form the diffusions and underlying interconnection layers using well known techniques. After the deposition and patterning of the last interconnection layer prior to metallization, a layer of the platinum or another metal is deposited onto the slice. The slice is sintered to form a silicide film on those portions of the interconnection layers and diffusions which were directly exposed to the sputtered platinum. A layer of phosphorous-doped dielectric is then deposited, followed by a layer of undoped oxide. Photoresist or another conformal material is spun on to the slice, resulting in a planar top surface. The slice is exposed to a plasma etch which etches both the photoresist and the undoped oxide, resulting in a top surface of the undoped oxide which is substantially planar.

Abstract: Method and apparatus for cooling electrochemical fuel cell system components. Periodic reversal of the direction of flow of cooling fluid through a fuel cell stack provides greater uniformity and cell operational temperatures. Flow direction through a recirculating coolant fluid circuit is reversed through a two position valve, without requiring modulation of the pumping component.