Abstract: Disclosed is an organic light emitting display device. The organic light emitting display device includes: at least one transistor arranged in a transistor region of the substrate and configured to include a channel layer, an insulation film, a gate electrode, a source electrode and a drain electrode; a storage capacitor arranged in the storage capacitor region, the pixel region and the pad region of the substrate and configured to include a first storage electrode, an insulation film pattern and a second storage electrode; a color filter arranged over the storage capacitor opposite to the pixel region; and an organic light emitting diode arranged on the color filter and configured to include a first electrode, an organic emission layer and a second electrode.

Abstract: To provide a method of manufacturing a semiconductor device that can be in contact with both of an n-type SiC region and a p-type SiC region and can suppress increase in contact resistance due to oxidation, a method of manufacturing a semiconductor device includes the steps of preparing a SiC layer, and forming an ohmic electrode on a main surface of the SiC layer. The step of forming the ohmic electrode includes the steps of forming a conductor layer which will become the ohmic electrode on the main surface of the SiC layer, and performing heat treatment such that the conductor layer becomes the ohmic electrode. After the step of performing the heat treatment, a temperature of the ohmic electrode when a surface of the ohmic electrode is exposed to an atmosphere containing oxygen is set to 100° C. or lower.