Abstract: Lithography methods and devices are shown that include a semiconductor structure such as a mask. Methods and devices are shown that include a pattern of mask features and a composite feature. Selected mask features include doubled mask features. Methods and devices shown may provide varied feature sizes (including sub-resolution) with a small number of processing steps.

Abstract: A pattern is formed by coating a resist composition comprising a resin comprising recurring units having an acid labile group, a photoacid generator, and a first organic solvent onto a processable substrate, prebaking, exposing, PEB, and developing in an organic solvent developer to form a negative pattern; heating the negative pattern to render it resistant to a second organic solvent; coating a solution of a resin having a carbon content of at least 75 wt % in the second organic solvent thereon, prebaking, and dry etching to effect image reversal for converting the negative pattern into a positive pattern.

Abstract: A semiconductor process is described in this application. The process includes the following steps: providing a semiconductor substrate; measuring a warpage level of the semiconductor substrate; and holding the semiconductor substrate by providing at least one vacuum suction according to the warpage level, so that the semiconductor substrate is subjected to a plurality of varied suction intensities. The semiconductor substrate is held on a chuck having a plurality of holes grouped into a plurality of groups, and the sizes of the holes within different groups are different, wherein the sizes of the holes increase from a center toward an edge of the chuck, and the holes are arranged in a spiral.

Abstract: Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.

Abstract: A system for fabricating a radiation-cured structure is provided. The system includes a radiation-sensitive material having a first refractive index; a mask formed from a mask material having a second refractive index; and a radiation source. The mask is disposed between the radiation source and the radiation-sensitive material, and has a plurality of substantially radiation transparent apertures. The radiation source is configured to generate radiation beams for at least one of initiating, polymerizing, and crosslinking the radiation-sensitive material. The system includes at least one of a) an at least one normalizing surface disposed between the radiation source and the mask, b) a refractive fluid having a third refractive index disposed between the radiation source and the mask, and c) the refractive fluid having the third refractive index disposed between the mask and the radiation-sensitive material. A method for fabricating the radiation-cured structure is also provided.

Abstract: A negative pattern is formed by applying a resist composition onto a substrate, prebaking, exposing to high-energy radiation, baking (PEB), and developing the exposed resist film in an organic solvent developer to dissolve the unexposed region of resist film. The resist composition comprising a polymer comprising recurring units of cycloolefin having a hydroxyl group substituted with an acid labile group, an acid generator, and an organic solvent displays a high dissolution contrast and high etch resistance.

Abstract: Provided is a pattern forming method including, in the following order: (1) forming a resist film on a substrate; (2) exposing the resist film, and thereby forming a first line-and-space latent image; (3) subjecting the resist film in which the first line-and-space latent image has been formed, to a first heating treatment; (4) exposing the resist film that has been subjected to the first heating treatment, and thereby forming a second line-and-space latent image, so that the line direction in the second line-and-space latent image intersects the line direction in the first line-and-space latent image; (5) subjecting the resist film in which the second line-and-space latent image has been formed, to a second heating treatment; and (6) developing the resist film that has been subjected to the second heating treatment, using a developer containing an organic solvent.

Abstract: The critical dimension (CD) of features formed during the fabrication of a semiconductor device may be controlled through the use of a dry develop chemistry comprising O2, SO2 and a hydrogen halide. For example, a dry develop chemistry comprising a gas comprising O2 and a gas comprising SO2 and a gas comprising HBr may be used to remove exposed areas of a carbon-based mask. The addition of HBr to the conventional O2 and SO2 dry develop chemistry enables a user to tune the critical dimension by growing, trimming and/or sloping the sidewalls and to enhance sidewall passivation and reduce sidewall bowing.

Abstract: Correction of reticle defects, including reticle weak spots or shortcomings, is accomplished with a second exposure. Embodiments include obtaining a reticle with a pattern corresponding to a wafer pattern design, exposing a wafer with the reticle, modifying the design, designating variations between the design and the modified design as reticle defects, and exposing the wafer with correction patterns containing structure corresponding to the modified design at defect positions. Other embodiments include modifying, eliminating, and/or shifting the pattern near a reticle blank defect position, and exposing a wafer with the reticle and with a correction pattern containing structure corresponding to the design at a defect position; modifying a patterned reticle surface layer near a defect forming an expanded defect, exposing a wafer with the modified reticle and with an expanded defect correction pattern; and exposing a wafer with a reticle and with a correction pattern larger than a detected reticle defect.

Abstract: A pattern forming method contains: (i) a step of forming a first film on a substrate by using a first resin composition (I), (ii) a step of forming a second film on the first film by using a second resin composition (II) different from the resin composition (I), (iii) a step of exposing a multi-layered film having the first film and the second film, and (iv) a step of developing the first film and the second film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.

Abstract: According to one embodiment, there is provided a method of forming a pattern, including forming a thermally crosslinkable molecule layer including a thermally crosslinkable molecule on a substrate, forming a photosensitive composition layer including a photosensitive composition on the thermally crosslinkable molecule layer, chemically binding the thermally crosslinkable molecule to the photosensitive composition by heating, selectively irradiating the photosensitive composition layer with energy rays, forming a block copolymer layer including a block copolymer on the photosensitive composition layer, and forming a microphase-separated structure in the block copolymer layer.

Abstract: Sub-diffraction-limited patterning using a photoswitchable recording material is disclosed. A substrate can be provided with a photoresist in a first transition state. The photoresist can be configured for spectrally selective reversible transitions between at least two transition states based on a first wavelength band of illumination and a second wavelength band of illumination. An optical device can selectively expose the photoresist to a standing wave with a second wavelength in the second wavelength band to convert a section of the photoresist into a second transition state. The optical device or a substrate carrier securing the substrate can modify the standing wave relative to the substrate to further expose additional regions of the photoresist into the second transition state in a specified pattern.

Abstract: A method for producing a substrate having a surface nanostructure, including a forming, on a substrate, a layer containing a block copolymer having a plurality of blocks bonded together, and subsequently heating this layer to cause phase separation of the layer; a decomposing at least a portion of the phase including at least one block of the plurality of blocks that constitute the block copolymer of this layer; and immersing the layer in a developing solution and selectively removing the phase containing the decomposed block(s), the developing solution containing, as the main component, an organic solvent having an SP value of 7.5 to 11.5 (cal/cm3)1/2 and a vapor pressure at 25° C. that is less than 2.1 kPa, or benzene which may be substituted with an alkyl group, an alkoxy group or a halogen atom.

Abstract: The present invention relates to methods of fabricating transparent conductive films based on nanomaterials, in particular, silver nanowires. The present invention incorporates a single step of annealing and patterning the conductive films by using a high energy flash lamp without post treatment to improve the conductivity and create substantially invisible patterns on the films for use in touch panel or display manufacturing industry.

Abstract: A pattern is formed by coating a chemically amplified resist composition comprising a resin having a dissolution rate in an organic solvent developer that lowers under the action of acid onto a processable substrate, prebaking, exposing the resist film, PEB, developing in an organic solvent developer to form a negative pattern, coating a solution comprising Si, Ti, Zr, Hf or Al, prebaking, and dry etching to effect image reversal for converting the negative pattern into a positive pattern.

Abstract: Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.

Abstract: Provided by the present invention is a method including: (1) forming a resist underlayer film on the upper face side of a substrate to be processed using a composition for forming a resist underlayer film, the composition containing (A) a compound having a group represented by the following formula (1); (2) forming a resist coating film by applying a resist composition on the resist underlayer film; (3) exposing the resist coating film by selectively irradiating the resist coating film with a radiation; (4) forming a resist pattern by developing the exposed resist coating film; and (5) forming a predetermined pattern on the substrate to be processed by sequentially dry etching the resist underlayer film and the substrate using the resist pattern as a mask.

Abstract: Disclosed is a resist ink having superior acid-resistance and coupling property, the resist ink composed of 70% or less by weight of solvent, 10-15% by weight of base polymer, 10-15% by weight of tacktifier, 3% or less by weight of additive, and 1-10% by weight of coupling agent.

Abstract: Systems and methods for liquid deposition photolithography are described. In particular, some embodiments relate to systems and methods for using photolithography to control the 2D structure of a thin layer of material (e.g., photopolymer) using various masks, projection optics and materials. In one or more embodiments, this thin layer can be manipulated by micro-fluidic techniques such that it can be formed, patterned and post-processed in a liquid environment, vastly simplifying the creation of multi-layer structures. Multiple layers are rapidly built up to create thick structures of possibly multiple materials that are currently challenging to fabricate by existing methods.

Abstract: A method of manufacturing a narrow frame touch input sheet having very good anticorrosion properties and suitable for a narrow frame capacitance type touch sensor having a double-layer transparent conductive film pattern.