Abstract: Aspects of the disclosure provide a semiconductor device. The semiconductor device includes a first stack of layers including a source connection layer and a second stack of layers including gate layers and insulating layers. The gate layers and the insulating layers are stacked alternatively upon the first stack of layers. Further, the semiconductor device includes channel structures that are formed along the first direction in the first stack of layers and the second stack of layers, and a gate line cut structure having a trench that cuts through the first stack of layers and the second stack of layers. The trench is filled with at least an insulating layer. The semiconductor device includes a support structure having a first portion that is disposed at a side of the gate line cut structure and extended from the side of the gate line cut structure and underneath the second stack of layers.

Abstract: A semiconductor package includes a first die structure, a first redistribution structure that is disposed on the first die structure, a second die structure that is disposed on the first redistribution structure, and a second redistribution structure that is disposed on the second die structure. The first die structure includes an interposer, and the interposer includes a semiconductor substrate and through-vias that penetrate through the semiconductor substrate. A first integrated circuit die is disposed in the semiconductor substrate of the interposer. The second die structure includes a second integrated circuit die that is encapsulated in an encapsulant and several conductive pillars that penetrate through the encapsulant. The first integrated circuit die is electrically connected to the second integrated circuit die through the first redistribution structure, the conductive pillars, and the second redistribution structure.

Abstract: Provided are a backplane and a display device. The backplane comprises an active area, a first binding area and a second binding area. The first binding area is detachably disposed on a side of the second binding area away from the active area, and both the first binding area and the second binding area are capable of being bonded to an external electronic assembly. By arranging two binding areas, if there is a defective product in a module process, the first binding area is detached, and the second binding area is attached to the external electronic assembly, such that the display device is repaired in the module process, thereby reducing a scrapping cost of the product.

Abstract: An extreme ultraviolet mask includes a substrate, a reflective multilayer stack over the substrate, a capping layer over the reflective multilayer stack, a patterned absorber layer over a first portion of the capping layer, and a magnetic layer over a second portion of the capping layer around the first portion.

Abstract: A display device may include: a base layer including a display area and a non-display area; and a plurality of pixels in the display area, and each including a plurality of sub-pixels each including an emission area configured to emit light and a peripheral area around the emission area. The sub-pixels may include: at least one first electrode and at least one second electrode extending in a direction and spaced apart from each other; and a plurality of light emitting elements between a first electrode of the at least one first electrode and a second electrode of the at least one second electrode and configured to emit light. At least one of the first electrode and the second electrode may include at least two first electrode patterns spaced apart from each other, and coupled by at least one first connection pattern in the emission area.

Abstract: A display device includes: a substrate including a display area, and a peripheral area around the display area; a pad portion at the peripheral area, and including a first pad and a second pad adjacent to each other; a fan-out wire portion including a first fan-out wire below the first pad and connected to the first pad through a first contact hole to extend to the display area, and a second fan-out wire below the second pad and connected to the second pad through a second contact hole to extend to the display area; and a conductive layer between an upper portion of the fan-out wire portion and a lower portion of the pad portion, and at least partially corresponding to an overlapping area of the fan-out wire portion and the pad portion. The second fan-out wire at least partially overlaps with the first pad.

Abstract: A method for forming an SOI substrate is provided. The method includes following operations. A recycle substrate is received. A first multilayered structure is formed on the recycle substrate. A trench is formed in the first multilayered structure. A lateral etching is performed to remove portions of sidewalls of the trench to form a recess in the first multilayered structure. The trench and the recess are sealed with an epitaxial layer, and a potential cracking interface is formed in the first multilayered structure. A second multilayered structure is formed over the first multilayered structure. The device layer of the recycle substrate is bonded to an insulator layer over an carrier substrate. The first multilayered structure is cleaved along the potential cracking interface to separate the recycle substrate from the second multilayered structure, the insulator layer and the carrier substrate. The device layer is exposed.

Abstract: A method of fabricating a semiconductor device comprises forming backside power rails in a dielectric layer arranged above a backside interlayer dielectric (BILD) layer or a semiconductor layer, forming a trench that extends through the BILD layer or the semiconductor layer and partly through the dielectric layer between the backside power rails, depositing a plurality of layers to form a backside metal-insulator-metal (MIM) capacitor in the trench, and forming a first contact to a first metal layer of the plurality of layers. Forming the first contact comprises forming first recesses in a second metal layer of the plurality of layers, and filling the first recesses with an insulative material. The method further comprises forming a second contact to the second metal layer. Forming the second contact comprises forming second recesses in the first metal layer, and filling the second recesses with the insulative material.

Abstract: A reflective member having transflective and substantially opaque regions is disclosed. The transflective region may serve as a sensor opening region. When viewing the member from a first direction, the difference between a total light reflectance of the member at the substantially opaque region and at the sensor opening region is less than five percent. Additionally, when viewing the member from the first direction, the difference between a color reflectance of the member at the substantially opaque region and at the sensor opening region is less than 5 delta C* units. A sensor disposed in a second direction of the sensor opening region of the member is operable to receive light through the member at the sensor opening region. The second direction is opposite the first direction.

Abstract: A semiconductor device includes a stack structure including interlayer insulating layers and horizontal layers on a lower structure; a memory vertical structure vertically penetrating the stack structure; first and second barrier structures penetrating the stack structure in parallel; a supporter pattern penetrating the stack structure; and through contact plugs penetrating the stack structure. The first barrier structure includes first barrier patterns arranged in a first direction and spaced apart from each other, and second barrier patterns arranged in the first direction and spaced apart from each other. Each of the first and second barrier patterns includes a linear shape extending in the first direction. In a first barrier pattern and a second barrier pattern adjacent to each other, a portion of the first barrier pattern opposes a portion of the second barrier pattern in a second direction perpendicular to the first direction.

Abstract: An image sensing device includes a first unit pixel block, a second unit pixel block, and an isolation transistor. The first unit pixel block includes a first common floating diffusion node, first photoelectric conversion elements, first transfer transistors and a first conversion gain transistor configured to change capacitance of the first common floating diffusion node. The second unit pixel block adjacent to the first unit pixel block includes a second common floating diffusion node, second photoelectric conversion elements, second transfer transistors and a second conversion gain transistor configured to change capacitance of the second common floating diffusion node. The isolation transistor located in a boundary region between the first unit pixel block and the second unit pixel block isolates the first conversion gain transistor and the second conversion gain transistor from each other.

Abstract: A semiconductor integrated circuit includes: a semiconductor base body of a first conductivity-type; a bottom surface electrode to which a first potential is applied, the bottom surface electrode being provided on a bottom surface of the semiconductor base body; a first well of a second conductivity-type to which a second potential lower than the first potential is applied, the first well being provided on a top surface side of the semiconductor base body; a second well of the first conductivity-type provided in the first well; and an edge structure provided in the first well and configured to supply a third potential higher than the second potential to the second well.

Abstract: A display substrate, a display panel, and a display device are disclosed. The display substrate includes first and second display regions and sub-pixels. The sub-pixels are divided into first-type and second-type pixel groups arranged in a second direction. The first-type pixel group includes first and second sub-pixels located in the first and second display regions. The second-type pixel group includes second sub-pixels. The second sub-pixels of at least one of the first-type and the second-type pixel groups are disposed at two sides of the first display region in a first direction. The pixel circuits corresponding to the first and second sub-pixels in one first-type pixel group are connected to one first-type data line. The pixel circuits corresponding to the second sub-pixels in one second-type pixel group are connected to one second-type data line. A power line is disposed below a first-type data line in the first display region.