Abstract: An acoustic wave device is disclosed. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode formed with the piezoelectric layer, a temperature compensation layer over the interdigital transducer electrode. The interdigital transducer electrode includes a bus bar and fingers that extend from the bus bar. The fingers each includes an edge portion and a body portion. The acoustic wave device can include a mass loading strip overlaps the edge portions of the fingers. The acoustic wave device can include a portion of the temperature compensation layer is positioned between the mass loading strip and the piezoelectric layer. The acoustic wave device can include a buffer layer that is disposed at least partially between the mass loading strip and the temperature compensation layer. A thickness of the buffer layer can be at least one forth a thickness of the mass loading strip.

Abstract: Embodiments of the present disclosure provide a piezoelectric sensor and a haptic feedback apparatus. The piezoelectric sensor includes a base substrate; at least one piezoelectric device located on the base substrate; an organic insulation layer located on one side, facing away from the base substrate, of the piezoelectric device; an inorganic insulation layer located on one side, facing away from the base substrate, of the organic insulation layer, and a wiring layer located on one side, facing away from the base substrate, of the inorganic insulation layer.

Abstract: In some examples, an apparatus includes a first metal layer having a thickness, a piezoelectric material layer having a first side and a second side that is opposite the first side, the piezoelectric material layer first side abutting the first metal layer, the piezoelectric material layer second side having recesses, and a second metal layer abutting the piezoelectric material layer second side, the second metal layer having extensions that fill the recesses to form a metal frame that is at least partially recessed into the piezoelectric material layer. The first metal layer, the piezoelectric material layer, and the second metal layer form a resonator body. The metal frame has a shape governing a resonant mode of the resonator body.

Abstract: A piezoelectric vibrating device includes a piezoelectric layer composed of a bulk piezoelectric material, a lower electrode on a first surface of the piezoelectric layer and a supporting substrate bonded with the lower electrode.

Abstract: A piezoelectric actuator includes a deflectable membrane and a piezoelectric element attached to a part of the deflectable membrane for exerting a mechanical force on the deflectable membrane. The piezoelectric element is operable to perform an expansion and a contraction motion depending on an electric field applied to the piezoelectric element. The piezoelectric element leaves open a central region of the deflectable membrane and has a peripheral outline that does not coincide with an outline of the deflectable membrane.

Abstract: A piezoelectric laminate and a piezoelectric element have, on a substrate in the following order, a lower electrode layer and a piezoelectric film containing a perovskite-type oxide. The lower electrode layer includes a second layer arranged in a state of being in contact with the piezoelectric film and includes a first layer arranged on a side of the second layer from the substrate, where the first layer contains one or more of W, Mo, Nb, and Ta, as a main component, and the second layer contains Ir as a main component, where the thickness of the second layer is 50 nm or less.

Abstract: A film bulk acoustic resonator (FBAR) structure includes, a bottom cap wafer, a piezoelectric layer disposed on the bottom cap wafer, the piezoelectric layer including lithium niobate or lithium tantalate, a bottom electrode disposed below the piezoelectric layer, and a top electrode disposed above the piezoelectric layer. Portions of the bottom electrode, the piezoelectric layer, and the top electrode that overlap with each other constitute a piezoelectric stack. The FBAR structure also includes a cavity disposed below the piezoelectric stack. A projection of the piezoelectric stack is located within the cavity.

Abstract: A system includes a piezoelectric capacitor assembly and signal processing circuitry coupled to the piezoelectric capacitor assembly. The piezoelectric capacitor assembly includes a piezoelectric member and piezoelectric capacitors located at respective lateral positions along the piezoelectric member. Each piezoelectric capacitor includes: (1) a respective portion of the piezoelectric member, (2) a first electrode, and (3) a second electrode. The first and second electrodes are positioned on opposite side of the piezoelectric member. The piezoelectric capacitors include piezoelectric force-measuring elements (PFEs). The PFEs are configured to output voltage signals between the respective first electrode and the respective second electrode in accordance with a time-varying strain at the respective portion of the piezoelectric member between the respective first electrode and the respective second electrode resulting from a low-frequency mechanical deformation.

Abstract: The acoustic fiber transducer has a piezoelectric domain with Young's modulus, Epiezo, and including a non-centrosymmetric crystalline-phase piezoelectric material and inorganic piezoelectric particles. At least one charge collector domain is in electrical connection with the piezoelectric domain and includes an electrically conductive material operative to collect electrical charge generated in the piezoelectric domain. At least one electrical conductor is in electrical contact with the at least one charge collector domain and includes an electrically conductive material operative to transport electrical charge from a charge collector domain to an end of the acoustic fiber transducer as an electrical signal indicative of input acoustic sound pressure on a matrix of textile fibers that includes the acoustic fiber transducer. Outer acoustic energy transmission material has a Young's modulus Etrans, of 0.3 Pa-500 MPa, for matching vibrational modes of the textile fiber matrix.

Abstract: A piezoelectric laminate and a piezoelectric element have, on a substrate in the following order, a lower electrode layer, and a piezoelectric film containing a perovskite-type oxide. The lower electrode layer includes a first layer arranged in a state of being in contact with the substrate and includes a second layer arranged in a state of being in contact with the piezoelectric film, the first layer contains Ti or TiW as a main component, the second layer is a uniaxial alignment film which contains Ir as a main component and in which the Ir is aligned in a (111) plane, and a half width at half maximum of an X-ray diffraction peak from the (111) plane is 0.3° or more.

Abstract: A resonator device includes: a resonator element; a heat generating unit; a first package including a first base at which the resonator element and the heat generating unit are disposed, and a first lid bonded to the first base so as to accommodate the resonator element between the first lid and the first base; and a high emissivity layer that is disposed at a surface of the heat generating unit on a first lid side and that has an emissivity higher than an emissivity of the surface. In addition, a constituent material of the surface is silicon, and the emissivity of the high emissivity layer at room temperature is 0.5 or more.

Abstract: Aspects of this disclosure relate to bulk acoustic wave devices that have a raised frame structure. The raised frame structure can include a first raised frame layer that has a relatively low acoustic impedance. The raised frame structure can include a second raised frame layer that has a relatively high acoustic impedance. The first raised frame layer can have a thickness that is between about 0.02 and about 0.4 times the combined thickness H of the bulk acoustic wave device. The first raised frame layer can have a thickness that is between about 0.01 and about 0.2 times the resonant wavelength ? of the bulk acoustic wave device.

Abstract: A resonance device is provided that includes a lower lid that has a recessed portion, and a resonator that is mounted on the lower lid and has a vibration arm that performs out-of-plane bending vibration in a space including the recessed portion and a frame provided around the vibration arm and having a facing portion facing a tip of the vibration arm. The facing portion of the frame is located in an outer-side portion of the resonator with respect to a straight line connecting an intersection point of a perpendicular extending from the tip of the vibration arm toward the recessed portion of the lower lid and the recessed portion of the lower lid, to a cavity edge of the recessed portion facing the tip of the vibration arm.

Abstract: A vibration device includes a vibration element; a package including a base that is a semiconductor substrate having a first surface and a second surface that are in front-back relation, with the vibration element disposed at the first surface, an oscillation circuit that is disposed at the base and electrically coupled to the vibration element, and a lid that is a semiconductor substrate bonded to the base so as to accommodate the vibration element and electrically coupled to the base, and a resin layer disposed at the outer surface of the package.

Abstract: A transducer structure for a surface acoustic device comprises a composite substrate comprising a piezoelectric layer, a pair of inter-digitated comb electrodes, comprising a plurality of electrode means with a pitch p satisfying the Bragg condition, wherein the inter-digitated comb electrodes are embedded in the piezoelectric layer such that, in use, the excitation of a wave propagating mode in the volume of the electrode means is taking place and is the predominant propagating mode of the structure. The present disclosure relates also to an acoustic wave device comprising at least one transducer structure as described above and to a method for fabricating the transducer structure. The present disclosure relates also to the use of the frequency of the bulk wave propagating in the electrode means of the transducer structure in an acoustic wave device to generate contribution at high frequency, in particular, above 3 GHz.

Abstract: Metal films for first and second mounting terminals are formed at ends on both sides of a piezoelectric vibration plate across a vibrating portion, and first and second mounting terminals connected to these metal films are formed on outer surfaces of resin films adhered to the piezoelectric vibration plate. In case the metal films for first and second mounting terminals on both sides of the vibrating portion are desirably reduced in size in order to enlarge the vibrating portion, an adequate joining area for mounting purpose is still secured for the first and second mounting terminals formed on the outer surfaces of the resin films.

Abstract: An acoustic wave device includes a piezoelectric layer made of lithium niobate or lithium tantalate, and at least one pair of electrodes opposed to each other in a direction intersecting a thickness direction of the piezoelectric layer. When d is a thickness of the piezoelectric layer and p is a distance between centers of electrodes adjacent to each other in the at least one pair of electrodes, d/p is about 0.5 or less. The at least one pair of electrodes extend in a longitudinal direction and includes a first electrode and a second electrode with sectional shapes different from each other in any cross section in a direction orthogonal or substantially orthogonal to the longitudinal direction of the at least one pair of electrodes.

Abstract: A laminated piezoelectric element has excellent suppression effect on characteristics deterioration caused by a pyroelectric effect. Inside an element main body are a first internal electrode, a piezoelectric layer, and a second internal electrode that has different polarity from the first internal electrode, which are repeatedly layered a plurality of times along the lamination direction. A first external electrode is formed on a first side surface of the element main body. A second external electrode is formed on a second side surface of the element main body. A resistance layer connected to the internal electrodes is formed in at least part of a third side surface of the element main body in which the internal electrodes are exposed. An insulating layer is formed on a third side of the element main body so as to cover the resistance layer.

Abstract: A layered portion includes, at least above an opening, a first single-crystal piezoelectric body layer, a second single-crystal piezoelectric body layer, an intermediate electrode layer, a lower electrode layer, and an upper electrode layer. The first single-crystal piezoelectric body layer includes a material that produces a difference in etching rate between a positive side and a negative side of a polarization charge. The polarization charge of the first single-crystal piezoelectric body layer is negative on a side of the intermediate electrode layer and positive on a side of the lower electrode layer.

Abstract: A piezoelectric element includes a support member, a vibrator, a through electrode and a seed layer. The vibrator is disposed on an insulation film of the support member, and includes a piezoelectric film and an electrode coating film electrically connected to the piezoelectric film. The vibrator has a support region and a vibration region. The through electrode is electrically connected to the electrode coating film at the support region, and is disposed in a stacking direction of the support member and the vibrator. Between the piezoelectric film and the insulation film, the seed layer is disposed at a portion of the electrode coating film facing another portion of the electrode coating film connected to the through electrode in the stacking direction. The seed layer is made of material having a lattice constant closer to the piezoelectric film or material easier to cause the piezoelectric film to be self-aligned.