Abstract: An ultrasonic probe includes: a piezoelectric element that is used for transmitting and receiving ultrasonic waves; a signal electrode that is disposed at a rear surface side of the piezoelectric element; and a backing that is disposed at a rear surface side of the signal electrode, wherein the backing has a thermal resistance of 8 K/W or less, and the backing attenuates an ultrasonic wave with the lowest frequency by 10 dB or more, among frequencies at which transmittance and reception sensitivity of the ultrasonic probe is decreased from the maximum value thereof by 20 dB.

Abstract: An acoustic wave device includes first and second IDT electrodes electrically connected in series with each other by a common busbar common to the first and second IDT electrodes. In each of a first acoustic impedance layer and a second acoustic impedance layer, at least one of at least one high acoustic impedance layer and at least one low acoustic impedance layer is a conductive layer. At least a portion of the conductive layer in the first acoustic impedance layer and at least a portion of the conductive layer in the second acoustic impedance layer do not overlap with the common busbar when viewed in plan from a thickness direction of a piezoelectric layer. The conductive layer in the first acoustic impedance layer and the conductive layer in the second acoustic impedance layer are electrically insulated from each other.

Abstract: An acoustic resonator includes: a resonating unit including a piezoelectric layer, a first electrode disposed on a lower side of the piezoelectric layer, and a second electrode disposed on an upper side of the piezoelectric layer; a substrate disposed below the resonating unit; a support unit forming a cavity between the substrate and the resonating unit; and a pillar extending through the cavity and connecting the resonating unit to the substrate. The resonating unit further includes a first insertion layer disposed above the pillar.

Abstract: The driving apparatus comprises a vibrating body which includes an electro-mechanical energy conversion device, and drives a vibration-wave motor which moves the vibrating body and a driven body relatively to each other. The electro-mechanical energy conversion device has sensor electrodes that output detecting signals corresponding to vibrations of the vibrating body. Based on the detecting signals, the driving apparatus determines a direction in which the vibrating body and the driven body are to be moved relatively to each other.

Abstract: Highly deformable heterostructures utilizing liquid metals and nanostructures that are suitable for various applications, including but not limited to stretchable electronic devices that can be worn, for example, by a human being. Such a deformable heterostructure includes a stretchable substrate, a conductive liquid metal on the substrate, and nanostructures forming a solid-liquid heterojunction with the conductive liquid metal.

Abstract: A resonator includes a substrate, an acoustic Bragg mirror disposed above the substrate, and a bottom metal layer disposed above the acoustic Bragg mirror. The resonator also includes a piezoelectric plate disposed above the bottom metal layer. The resonator further includes a top metal layer disposed above the piezoelectric plate. The top metal layer comprises multiple fingers within a single plane and the width of each of the fingers is between 75%-125% of a thickness of the piezoelectric plate.

Abstract: A piezoelectric actuator including an upper piezoelectric bimorph beam having a first upper piezoelectric layer, a second upper piezoelectric layer and at least three upper electrode layers extending between a first end and a second end of the upper piezoelectric bimorph beam; a lower piezoelectric bimorph beam having a first lower piezoelectric layer, a second lower piezoelectric layer and at least three lower electrode layers extending between a first end and a second end of the lower piezoelectric bimorph beam, and wherein the first end of the lower piezoelectric bimorph beam is coupled to the first end of the upper piezoelectric bimorph beam by a first joint, and the second end of the lower piezoelectric bimorph beam is coupled to second end of the upper piezoelectric bimorph beam; and a base member coupled to a center region of the lower piezoelectric bimorph beam.

Abstract: A piezoelectric rotary optical mount including a clamp including a first hole to hold a hollow member, wherein a contact between the clamp and the hollow member generates a coefficient of friction; a bias element adjacent to the first hole to apply a force to control rotational movement of the hollow member by adjusting the coefficient of friction; and a piezoelectric element to actuate the bias element to apply the force. The clamp may include a housing body including a first end and a second end, wherein the first hole extends in a first axis through the housing body to accommodate the hollow member; a pair of elongated cutout regions extending from the first hole towards the second end to define the bias element; and a second hole adjacent to at least one of the cutout regions to accommodate the piezoelectric element.

Abstract: A bulk acoustic wave resonator includes: a substrate; a membrane layer forming a cavity together with the substrate; a lower electrode disposed on the membrane layer; a piezoelectric layer disposed on a flat surface of the lower electrode; and an upper electrode covering a portion of the piezoelectric layer and exposing a side of the piezoelectric layer to air, wherein the piezoelectric layer includes a step portion extended from the side of the piezoelectric layer and disposed on the flat surface of the lower electrode.

Abstract: An acoustic resonator includes a substrate, an insulation layer disposed on the substrate, a resonating portion disposed on the insulation layer and having a first electrode, a piezoelectric layer, and a second electrode, stacked thereon, a cavity disposed between the insulation layer and the resonating portion, a protruded portion having a plurality of protrusions disposed on a lower surface of the cavity, and a hydrophobic layer disposed on an upper surface of the cavity and a surface of the protruded portion.

Abstract: A sensing film includes a base layer, a piezoelectric layer formed on the base layer, and a first electrode and a second electrode formed on the piezoelectric layer. The first and second electrodes are spaced apart and electrically insulated from each other. The first electrode includes a first connecting portion and a number of first extending portions coupled to the first connecting portion. The second electrode includes a second connecting portion and a number of second extending portions coupled to the second connecting portion. The first connecting portion and the second connecting portion are spaced apart and face each other. The first extending portions extend from a side of the first connecting portion toward the second connecting portion. The second extending portions extend from a side of the second connecting portion toward the first connecting portion. The first extending portions and the second extending portions are alternately arranged.

Abstract: A piezoelectric substrate attachment structure including a cable-shaped piezoelectric substrate, a press section provided adjacent to the piezoelectric substrate and pressed from an opposite side from the piezoelectric substrate, and a base section provided adjacent to the piezoelectric substrate on an opposite side from the press section. A ratio Eb/Ea of a Young's modulus Eb of the base section to a Young's modulus Ea of the press section being 10?1 or lower.

Abstract: A film bulk acoustic resonator (FBAR) structure includes a top electrode, a piezoelectric layer disposed below the top electrode, a bottom electrode disposed below the piezoelectric layer, a dielectric layer disposed below the bottom electrode, a bonding substrate disposed below the dielectric layer, a bottom cap wafer disposed below the bonding substrate, and a cavity disposed below the bottom electrode and formed by the dielectric layer, the bonding substrate, and the bottom cap wafer.

Abstract: The vibration device includes a diaphragm, and a plurality of piezoelectric films that are arranged at predetermined intervals in a first direction of the diaphragm to face the diaphragm and extend parallel to a second direction orthogonal to the first direction. The diaphragm has at least one slit formed therein and dividing the diaphragm into respective regions. Each of the piezoelectric films are fixed to a respective region of the diaphragm while extending along the second direction in a tensioned state. The piezoelectric films expand and contract in a plane direction when a voltage is applied thereto.

Abstract: A piezoelectric thin-film suspended above a carrier substrate. An input interdigital transducer (IDT) having first interdigitated electrodes is disposed at different locations along the horizontal axis and on the first side of the piezoelectric thin-film. Each opposing pair of the first interdigitated electrodes is to selectively transduce a particular frequency range of an input electrical signal that varies in frequency over time into an acoustic wave of a laterally vibrating mode based on a pitch between electrodes of the opposing pair. An output IDT that includes second interdigitated electrodes is disposed at different locations along the horizontal axis and on the second side of the piezoelectric thin-film. Each opposing pair of the second interdigitated electrodes is to convert the acoustic wave transduced by the respective opposing pair of the first interdigitated electrodes into a compressed pulse.

Abstract: A gallium nitride structure that includes: a substrate; a gallium nitride layer opposed to the substrate and containing gallium nitride as a main component thereof; and a first electrode between the gallium nitride layer and the substrate. The first electrode includes at least one hafnium layer containing a single metal of hafnium as a main component thereof, and the at least one hafnium layer is in contact with the gallium nitride layer.

Abstract: In an embodiment, a multilayer piezoelectric element includes a multilayer piezoelectric body and multiple internal electrodes. The multilayer piezoelectric body has a pair of principal faces in a first-axis direction, a pair of end faces in a second-axis direction crossing at right angles with the first-axis direction and defining the longitudinal direction, and a pair of side faces in a third-axis direction crossing at right angles with the first-axis direction and second-axis direction. The multiple internal electrodes are placed inside the multilayer piezoelectric body and stacked in the first-axis direction. Among the multiple internal electrodes, a center internal electrode placed at the center part of the multilayer piezoelectric body is such that its first cross-sectional shape, as viewed from the third-axis direction, has undulations greater than the undulations of the second cross-sectional shape of the center internal electrode as viewed from the second-axis direction.

Abstract: A multilayer piezoelectric element includes a ceramic base body, a pair of external electrodes, multiple internal electrodes, and surface electrodes. The pair of external electrodes cover a pair of end faces and extend from the pair of end faces along a pair of principal faces and a pair of side faces. The multiple internal electrodes are stacked inside the ceramic base body along the thickness direction, and are connected alternately to one or the other of the pair of external electrodes along the thickness direction. The surface electrodes extend from the pair of external electrodes along the pair of principal faces, and are each divided in the longitudinal direction at a position near, of the pair of external electrodes, the external electrode to which the internal electrode adjacent to the principal face is connected.

Abstract: An acoustic resonator includes: a substrate; a resonant portion including a center portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate, and an extension portion disposed along a periphery of the center portion; and a first metal layer disposed outwardly of the resonant portion to be electrically connected to the first electrode. The extension portion includes a lower insertion layer disposed on an upper surface of the first electrode or a lower surface of the first electrode. The piezoelectric layer includes a piezoelectric portion disposed in the center portion, and a bent portion disposed in the extension portion and extended from the piezoelectric portion at an incline according to a shape of the lower insertion layer. The lower insertion layer is formed of a conductive material extending an electrical path between the first electrode and the first metal layer.

Abstract: A bulk-acoustic wave resonator includes a substrate, a first layer, a second layer, a membrane layer, and a resonance portion. The substrate includes a substrate protection layer. The first layer is disposed on the substrate protection layer. The second layer is disposed outside of the first layer. The membrane layer forms a cavity with the substrate protection layer and the first layer. The resonance portion is disposed on the membrane layer. Either one or both of the substrate protection layer and the membrane layer includes a protrusion disposed in the cavity.