Abstract: The present invention introduces a scanning arrangement and a method suitable for coating processes applying laser ablation. The arrangement is suited to prolonged, industrial processes. The arrangement comprises a target, which has an annular form. The laser beam direction is controlled by a rotating mirror locating along the center axis of the annular target. The scanning line will rotate circularly along the inner target surface when the mirror rotates. The focal point of the laser beams may be arranged to locate on the inner target surface to ensure a constant spot size. A ring-formed, a cylinder-shaped or a cut conical-shaped target may be used. The inner surface of the target may thus be tapered in order to control the release direction of the ablated material towards a substrate to be coated.

Abstract: A carrier plate for receiving a wafer includes a pocket defined in a middle section on a top surface of the carrier plate and has a surface diameter. The pocket defines a substrate support region. A retaining feature of the carrier plate is defined at an outer edge of the pocket. A tapered portion of the carrier plate extends from the retaining feature to an outer diameter. The tapered portion is configured to receive a focus ring. A bottom surface of the carrier plate is configured to sit over a pedestal that is used in a process chamber. A plurality of wafer supports is disposed on a top surface of the substrate support region to support the wafer, when received.

Abstract: A substrate support for supporting a substrate in a substrate processing system includes a baseplate and a ceramic layer arranged above the baseplate. An outer perimeter of the ceramic layer is surrounded by an edge ring. An outer radius of the ceramic layer is greater than an inner radius of the edge ring such that an outer edge of the ceramic layer extends below the edge ring.

Abstract: In one embodiment, an adapter plate for a deposition chamber is provided. The adapter plate comprises a body, a mounting plate centrally located on the body, a first annular portion extending longitudinally from a first surface of the mounting plate and disposed radially inward from an outer surface of the mounting plate, a second annular portion extending longitudinally from an opposing second surface of the mounting plate and disposed radially inward from the outer surface of the mounting plate, and a mirror-finished surface disposed on the interior of the second annular portion, the mirror-finished surface having an average surface roughness of 6 Ra or less.

Abstract: An apparatus includes a deposition chamber housing that accommodates a growth substrate, a supply nozzle to supply a deposition gas for forming a target large-size substrate on the growth substrate into the deposition chamber housing, a susceptor to support the growth substrate and expose a rear surface of the growth substrate to an etch gas, and an inner liner connected to the susceptor. The inner liner is to isolate the etch gas from the deposition gas and guide the etch gas toward the rear surface of the growth substrate. The susceptor includes a center hole that exposes the rear surface of the growth substrate and a support protrusion supporting the growth substrate, the support protrusion protruding toward the center of the center hole from an inner sidewall of the susceptor defining the center hole.

Abstract: An electrostatic chuck includes a base, a dielectric plate on the base, a chuck electrode in the dielectric plate, and a lower heater section including lower heaters in the dielectric plate between the chuck electrode and the base, and a lower ground electrode between the lower heaters and the base. The chuck further includes an upper heater section including upper heaters between the lower heaters and the chuck electrode, and a upper ground electrode between the upper heaters and the lower heaters, and a plurality of via contact electrodes connecting the upper ground electrode into the lower ground electrode.

Abstract: An electrostatic chuck, a substrate processing apparatus, and a method of manufacturing a semiconductor device are provided. The electrostatic chuck comprises a chuck base, an insulation plate on the chuck base, a first heater comprising a cell heater in the insulation plate, and a heater controller configured to control the cell heater. The heater controller obtains a resistance of the cell heater and compares the resistance with a threshold value to control a heating power provided to the cell heater.

Abstract: A component for use in a plasma processing apparatus, which is to be exposed to a plasma, includes a base material, an alumite layer and a thermally sprayed film. The base material has a plurality of through holes and a rough surface at which one end of each of the through holes is opended. The alumite layer is formed on a surface of the base material having the rough surface by an anodic oxidation process. The thermally sprayed film is formed on the rough surface with the alumite layer therebetween.

Abstract: Process kits, processing chambers, and methods for processing a substrate are provided. The process kit includes an edge ring, a sliding ring, an adjustable tuning ring, and an actuating mechanism. The edge ring has a first ring component interfaced with a second ring component that is movable relative to the first ring component forming a gap therebetween. The sliding ring is positioned beneath the edge ring. The adjustable tuning ring is positioned beneath the sliding ring. The actuating mechanism is interfaced with the lower surface of the adjustable tuning ring and configured to actuate the adjustable tuning ring such that the gap between the first and second ring components is varied. In one or more examples, the sliding ring includes a matrix and a coating, the matrix contains an electrically conductive material and the coating contains an electrically insulting material.

Abstract: A substrate support assembly suitable for use in a reactor including a common processing and substrate transfer region is disclosed. The substrate support assembly includes a susceptor and one or more lift pins that can be used to lower a substrate onto a surface of the susceptor and raise the substrate from the surface, to allow transfer of the substrate from the processing region, without raising or lowering the susceptor.

Abstract: A system and apparatus for thermal treatment of a substrate with improved thermal uniformity is provided. In some embodiments, the system includes a heating element, a substrate-retaining element operable to retain a substrate, and a reflective structure operable to direct thermal energy of the heating element towards the substrate retained in the substrate-retaining element. The reflective structure includes a textured portion wherein a texture of the textured portion is configured to direct the thermal energy towards the retained substrate. In some such embodiments, the texture includes a roughened irregular surface configured to direct the thermal energy towards the retained substrate. In some such embodiments, the texture includes a plurality of circumferential ridge structures configured to direct the thermal energy towards the retained substrate.

Abstract: A rotating disk reactor for chemical vapor deposition includes a vacuum chamber and a ferrofluid feedthrough comprising an upper and a lower ferrofluid seal that passes a motor shaft into the vacuum chamber. A motor is coupled to the motor shaft and is positioned in an atmospheric region between the upper and the lower ferrofluid seal. A turntable is positioned in the vacuum chamber and is coupled to the motor shaft so that the motor rotates the turntable at a desired rotation rate. A dielectric support is coupled to the turntable so that the turntable rotates the dielectric support when driven by the shaft. A substrate carrier is positioned on the dielectric support in the vacuum chamber for chemical vapor deposition processing. A heater is positioned proximate to the substrate carrier that controls the temperature of the substrate carrier to a desired temperature for chemical vapor deposition.

Abstract: A showerhead including a body having an opening, a first plate positioned within the opening and having a plurality of slots, a second plate positioned within the opening and having a plurality of slots, and wherein each of the first plate plurality of slots are concentrically aligned with the second plate plurality of slots.

Abstract: Apparatus for improving substrate temperature uniformity in a substrate processing chamber are provided herein. In some embodiments, a cover plate for a substrate processing chamber includes: an outer portion; and a raised inner portion having a thermally emissive layer, wherein a thermal emissivity of the thermally emissive layer varies across the thermally emissive layer.

Abstract: Embodiments of the present disclosure are directed to a quick disconnect resistance temperature detector (RTD) heater assembly, that includes a first assembly comprising a pedestal, a pedestal shaft, an adapter, one or more heater power supply terminals, and at least one RTD, and a second assembly comprising a rotating module having a central opening, and a cable assembly partially disposed in the central opening and securely fastened to the rotating module, wherein the first assembly is removably coupled to the second assembly, wherein the cable assembly includes one or more power supply sockets that receive the heater power supply terminals when the first and second assemblies are coupled together, and wherein the cable assembly includes one or more spring loaded RTD pins that contact the at least one RTD disposed in the first assembly when the first and second assemblies are coupled together.

Abstract: Provided is a fully automatic gravure plate-making processing system capable of manufacturing a gravure plate-making roll more quickly as compared to a conventional case, achieving space saving, performing an unattended operation even in the nighttime, and reducing dust between individual processes.

Abstract: A pulsed laser deposition system comprising a split ablation target having a first half and a second half, wherein the target contains a film material for deposition on a substrate, and wherein the film material is comprised of a plurality of component elements, the elements varying in volatility, and wherein one half of the split ablation target contains more of the most volatile elements being deposited than the other half, and wherein the split ablation target is rotated about its center. A laser beam is rastered back and forth across the target such that the laser spends more time on one half of the split target than the other half depending on the elemental volatility. The target rotation and laser beam rastering are coordinated simultaneously to vary the elemental composition of the resulting film deposition.

Abstract: A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a platen made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material having an upper stem flange that supports the platen, and a backside gas tube made of ceramic material that is located in an interior of the stem.

Abstract: Disclosed are methods and systems such as an imaging assembly that may include a variety of components, such as, but not limited to, a two-dimensional (2D) camera configured to capture 2D image data, a three-dimensional camera configured to capture three-dimensional (3D) image data, and an evaluation module executing on one or more processors. The 2D camera may be oriented in a direction to capture 2D image data of a first field of view of a container loading area, and the 3D camera may be oriented in a direction to capture 3D image data of a second field of view of the container loading area at least partially overlapping with the first field of view. The evaluation module may be configured to detect a status event in the container loading area based on 2D image data.

Abstract: A camera monitor system includes: left and right capturing devices; left and right displaying devices; and a control device detecting an abnormality of each of the left and right capturing devices and controlling a displaying state of each of the left and right displaying devices based on the detected abnormality. The control device individually controls each of the left and right displaying devices to be in a low power consumption state in accordance with a mode of the detected abnormality.