Abstract: A mounting table includes a wafer mounting surface mounting a wafer, a ring mounting surface disposed at a radially outer side of the wafer mounting surface and mounting a first ring having a first engaging portion and a second ring having a second engaging portion to be engaged with the first engaging portion, a lifter pin, and a driving mechanism. The second ring has a through-hole extends to reach a bottom surface of the first engaging portion, and the ring mounting surface has a hole at a position corresponding to the through-hole. A lifter pin has a first holding part that fits into the through-hole and a second holding part that extends from the first holding part and has a part protruding from the first holding part. The lifter pin is accommodated in the hole, and a driving mechanism vertically moves the lifter pin.

Abstract: A method of transferring semiconductor wafers and a semiconductor wafer support device including lift pins having a first end configured to contact a backside surface of the semiconductor wafer and at least one stress reduction feature. The stress reduction feature may be configured to reduce contact stress between the lift pins and the wafer.

Abstract: A substrate supporting plate that may prevent deposition on a rear surface of a substrate and may easily unload the substrate. The substrate supporting plate may include a substrate mounting portion and a peripheral portion surrounding the substrate mounting portion. An edge portion of a top surface of the substrate mounting portion may be anodized. A central portion of the top surface of the substrate mounting portion may not be anodized.

Abstract: A substrate retaining apparatus, a load lock assembly comprising the substrate retaining apparatus, and a system including the substrate retaining apparatus are disclosed. The substrate retaining apparatus can include at least one sidewall and one or more heat shields. One or more of the at least one sidewall can include a cooling fluid conduit to facilitate cooling of substrates retained by the substrate retaining apparatus. Additionally or alternatively, one or more of the at least one sidewall can include a gas conduit to provide gas to a surface of a retained substrate.

Abstract: A work processing apparatus performs processing of a surface to be processed of a work by causing a processing head to come into sliding contact with the work held on an upper surface of a holding plate. The processing head includes a plasma electrode that generates plasma and radiates the plasma to the surface to be processed of the work. In the plasma electrode, an annular or solid cylindrical central electrode provided at a center in a radial direction and an annular outer circumferential electrode provided at an outer side in the radial direction with respect to the central electrode are arranged with an annular slit portion intermediating therebetween at a boundary position thereof, the slit portion is configured as a plasma generation space, and a processing pad is provided at bottom surfaces of the central electrode and the outer circumferential electrode.

Abstract: A substrate supporting assembly includes a susceptor plate including at least one substrate seat, and a plurality of gas flow lines for supplying a lifting gas, an acceleration gas, and a deceleration gas to the substrate seat, and at least one satellite on the at least one substrate seat and including an upper surface, and a lower surface where a rotation pattern for receiving a rotational force and a braking force from the acceleration gas and the deceleration gas is provided. The at least one satellite is lifted from the at least one substrate seat by the lifting gas supplied from the at least one substrate seat, is rotated relative to the susceptor plate by the acceleration gas supplied in a forward direction of rotation, to rotate the substrate, and is decelerated or stopped by the deceleration gas supplied in a reverse direction of rotation.

Abstract: A wafer holder and temperature controlling arrangement has a metal circular wafer carrier plate, which covers a heater compartment. In the heater compartment a multitude of heater lamp tubes is arranged, which directly acts upon the circular wafer carrier plate. Latter is drivingly rotatable about the central axis. A wafer is held on the circular wafer carrier plate by means of a weight-ring residing upon the periphery of a wafer deposited on the wafer carrier plate.

Abstract: In a disclosed plasma processing apparatus, an electrostatic chuck provided in a chamber includes a first region on which a substrate is placed and a second region on which an edge ring is placed. The first region includes a first electrode provided therein. The second region including a second electrode provided therein. A first feed line connects the first electrode and a bias power supply generating a pulse of a voltage applied to the first electrode to each other. A second feed line connects the second electrode and the bias power supply or another bias power supply generating a pulse of the voltage applied to the second electrode to each other. The second feed line includes one or more sockets and one or more feed pins. The one or more feed pins have flexibility in a radial direction thereof and are fitted into the one or more sockets.

Abstract: A bottom ring is configured to support a moveable edge ring. The edge ring is configured to be raised and lowered relative to a substrate support. The bottom ring includes an upper surface that is stepped, an annular inner diameter, an annular outer diameter, a lower surface, and a plurality of vertical guide channels provided through the bottom ring from the lower surface to the upper surface of the bottom ring. Each of the guide channels includes a first region having a smaller diameter than the guide channel, and the guide channels are configured to receive respective lift pins for raising and lowering the edge ring.

Abstract: A chemical vapor deposition device capable of reciprocating rotation and lifting is provided. The chemical vapor deposition device includes a cavity, a base, a fixing bracket, a lifting mechanism, and a rotation mechanism. The present disclosure utilizes the principle of magnetic-fluid sealing to achieve device sealing and integrates the rotation and lifting functions, satisfying the coordinated work of reciprocating rotation, lifting movement, wafer heating, etc. at the same time without affecting each other. Moreover, the problem of physical entanglement and damage of electrical wires during the rotation process has been avoided, and micro-particles formed in the cavity will not affect the rotation mechanism, thereby enabling the efficient and stable operation of the rotation mechanism.

Abstract: Embodiments of the present disclosure generally relate to an apparatus and method of processing a substrate. In at least one embodiment, an apparatus includes a chamber body, a substrate support assembly and a bracket assembly disposed outside the chamber body and coupled to the substrate support assembly. The bracket assembly has a plurality of leveling screws for adjusting a level of the substrate support assembly. The apparatus includes an actuator coupled to one of the plurality of leveling screws and an accelerometer coupled to the substrate support assembly. The accelerometer is configured to indicate an orientation of the substrate support assembly. The apparatus includes a control module in communication with the actuator and the accelerometer. The control module is configured to determine the level of the substrate support assembly based on the orientation indicated by the accelerometer and adjust the level of the substrate support assembly using the actuator.

Abstract: Provided is a cooling sheet attachment apparatus to a focusing ring for a semiconductor manufacturing apparatus, including: a vacuum chamber equipped with a sheet support ring fixed to seat a cooling sheet in a chamber body with an adhesion surface exposed in an upward direction, a centering jig installed on an inner or outer circumferential surface of the sheet support ring liftably to be moved back in the upward direction by an elastic support, a cover for opening/closing installed above the chamber body and lifted by a lift unit, a press unit provided on the cover to press down the focusing ring, and a vacuum suction tube connected to the chamber body for vacuum suction; and a vacuum suction unit to create a vacuum in the vacuum chamber by the suction through the vacuum suction tube.

Abstract: The method relates to a method of forming an enhanced unexposed photoresist layer from an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed photoresist to exposure radiation. The method comprises: providing the substrate with the unexposed photoresist layer in a reaction chamber; providing a first precursor comprising a portion of a photosensitizer sensitive to exposure radiation in the reaction chamber; and, infiltrating the unexposed photoresist layer on the substrate with the first precursor.

Abstract: A method of etching a film of a substrate is provided. The substrate includes an underlying region, the film and a mask. The film is provided on the underlying region. The mask is provided on the film. The method comprises performing main etching on the film. The main etching is plasma etching of the film and exposes at least a part of the underlying region. The method further comprises forming a protective layer on at least a side wall surface of the mask after the performing of the main etching. A material of the protective layer is different from a material of the film. The method further comprises performing over-etching on the film after the forming of the protective layer. The over-etching is plasma etching of the film.

Abstract: Disclosed is a stage including a first supporting plate, a second supporting plate under the first supporting plate, a shaft under the second supporting plate and overlapping with the first supporting plate and the second supporting plate, and at least one sheath heater passing through the second supporting plate. The at least one sheath heater is arranged so as to extend on a first surface and a second surface which are parallel to an upper surface of the second supporting plate and which are different in distance from the first supporting plate from each other.

Abstract: A support unit may include a plurality of heaters disposed in a matrix form in the support unit to heat a substrate, and a power supply unit for supplying power to the plurality of heaters, wherein a current applied to the plurality of heaters is controlled by switches connected to rows and columns of the matrix, respectively, and the switches connected to the rows of the matrix include first switches capable of controlling the current applied to the rows of the matrix and second switches connected in parallel with the first switches.

Abstract: A component for a plasma processing apparatus includes a substrate and a film on at least a part of the substrate. The film includes an oxide, a fluoride, an oxyfluoride, or a nitride of a rare earth element. A ratio ?22/?11 of a compressive stress ?11 to occur across a surface of the film to be exposed to plasma and a compressive stress ?22 to occur across the surface in a direction perpendicular to the compressive stress ?11 is 5 or less. A plasma processing apparatus includes the above component.

Abstract: A method and apparatus for biasing regions of a substrate in a plasma assisted processing chamber are provided. Biasing of the substrate, or regions thereof, increases the potential difference between the substrate and a plasma formed in the processing chamber thereby accelerating ions from the plasma towards the active surfaces of the substrate regions. A plurality of bias electrodes herein are spatially arranged across the substrate support in a pattern that is advantageous for managing uniformity of processing results across the substrate.

Abstract: The device (420) is for supporting substrates in a reaction chamber of an epitaxial reactor; it comprises: a disc-shaped element (422) having a first face (422A) adapted to be upperly positioned when the device (420) is being used and a second face (422B) adapted to be lowerly positioned when the device (420) is being used, said disc-shaped element (422) being adapted to receive a gas flow (F) to rotate the device (420) about an axis (X) thereof, a substrate-supporting element (424) in a single piece with said disc-shaped element (422) and preferably adjacent to said first face (422A), and a shaft (426) coaxial to said disc-shaped element (422), in a single piece with said disc-shaped element (422) and having a first end (426A) at said second face (422B); said shaft (426) has at a second end (426 B) thereof at least a protrusion (428 A, 428B, 428C) whose rotation is adapted to be detected by a pyrometer (430) or a thermographic camera.

Abstract: A middle ring configured to be arranged on a bottom ring and to support a moveable edge ring and further configured to be raised and lowered relative to a substrate support includes an upper surface that is stepped, an annular inner diameter, an annular outer diameter, a lower surface, a guide feature in the upper surface defining the annular outer diameter, an inner annular rim in the upper surface defining the annular inner diameter, and a groove defined in the upper surface between the guide feature and the inner annular rim.