Abstract: A thermoelectric element comprises a first layer of a p-type iron silicide, and a second layer of an n-type iron silicide. The first and second layers are joined together to form a pn junction therebetween. An insulating layer of an oxide is interposed between the first and second layers at portions thereof other than the pn junction. The oxide forming the insulating layer consists essentially of 38.0-50% by weight SiO.sub.2, 0.1-10.0% by weight B.sub.2 O.sub.3, and the balance of MgO and inevitable impurities. In manufacturing the thermoelectric element, one of a powder of the p-type iron silicide and a powder of the n-type iron silicide, a powder of the insulating layer-forming oxide, which may be in the form of a sheet, and the other of the powder of the p-type iron silicide and the powder of the n-type iron silicide are charged into a hot pressing mold in the mentioned order, whereby a laminated body is formed within the mold.

Abstract: Thermoelectric device having a number of thermoelectric elements electrically connected in series and thermally connected in parallel. Each element is provided with two element halves, electrically connected in series and thermally connected in parallel, of opposite conductivity types. Each element half has two semiconducting end pieces and an electrically conducting intermediate piece which are electrically connected in series.