Abstract: A static random access memory comprises a memory cell array, a plurality of bit lines provided in correspondence to said plurality of memory cell columns, a first decoder for selecting a memory cell column, a second decoder for selecting a memory cell groups included in the selected memory cell column, and a third decoder supplied for selecting a memory cell included in the selected memory cell group. Each memory cell comprises a flip-flop circuit that is formed of thin film transistors. Each memory cell group includes a predetermined number of the memory cells, a sub-bit line extending over the memory cells included in the memory cell group, a first selection circuit connected to the sub-bit line and further to the bit line that corresponds to the selected memory cell group and a second selection circuit connected to the sub-bit line and the bit line that corresponds to the selected memory cell group.