Abstract: Provided is a piezoelectric material filler including alkali niobate compound particles having a ratio (K/(Na+K)) of the number of moles of potassium to the total number of moles of sodium and potassium of 0.460 to 0.495 in terms of atoms and a ratio ((Li+Na+K)/Nb) of the total number of moles of alkali metal elements to the number of moles of niobium of 0.995 to 1.005 in terms of atoms. The present invention can provide a piezoelectric material filler having excellent piezoelectric properties, and a composite piezoelectric material including the piezoelectric material filler and a polymer matrix.
Abstract: Synthesizing upconverting nanoparticles includes heating a precursor solution comprising one or more rare earth salts, an alkali metal salt or alkaline earth salt, and a solvent comprising a plasticizer in a microwave reactor to yield a product mixture, and cooling the product mixture to yield the upconverting nanoparticles. Core-shell upconverting nanoparticles are synthesized by combining the upconverting nanoparticles with a precursor solution comprising one or more rare earth salts, an alkali metal salt or alkaline earth salt, and a solvent comprising a plasticizer to yield a nanoparticle mixture, heating the nanoparticle mixture in a microwave reactor to yield a product mixture, and cooling the product mixture to yield the core-shell upconverting nanoparticles.
Type:
Grant
Filed:
April 22, 2021
Date of Patent:
May 16, 2023
Assignee:
Arizona Board of Regents on behalf of Arizona State University
Abstract: To provide a spinel ferrite magnetic powder having excellent characteristics. A method for manufacturing a magnetic powder includes: melting and then quenching a glass-forming component and a spinel ferrite magnetic powder-forming component to manufacture an amorphous body; and heat-treating the amorphous body to precipitate a spinel ferrite magnetic powder. An oxygen partial pressure during the heat treatment is 1.0 kPa or less.
Abstract: Compounds for use in the textile field, and more particularly the use of compounds of the 4-bora-3a,4a-diaza-s-indacene family for the manufacture of fluorescent fibers, the fluorescent compound being chosen from those of formula I: Also, processes for producing the fluorescent fibers and also to the uses thereof, notably for the provision of security to products.
Type:
Grant
Filed:
May 2, 2018
Date of Patent:
May 16, 2023
Assignee:
CRIME SCIENCE TECHNOLOGY
Inventors:
Cosimo Prete, Alexis Depauw, Jeremy Malinge
Abstract: A nano-composite includes a thermoplastic copolymer includes a polycarbonate copolymer including repeating siloxane units and a plurality of quantum dots. A method of making a polymer film includes forming a masterbatch composition by combining (1) a first thermoplastic copolymer including a polycarbonate copolymer including repeating siloxane units and (2) a plurality of quantum dots; combining the masterbatch composition with a second thermoplastic polymer to form a mixture; and forming the polymer film from the mixture. The polycarbonate copolymer has a siloxane content of from 15 wt % to 65 wt %.
Type:
Grant
Filed:
October 22, 2019
Date of Patent:
May 9, 2023
Assignee:
SHPP Global Technologies B.V.
Inventors:
Bing Zhou, Christopher Luke Hein, Hao Zhou
Abstract: This disclosure pertains to the field of nanotechnology. The disclosure provides methods of preparing nanostructures with fluoride passivation. The disclosure also provides methods of preparing nanostructures with fluoride and amine passivation. The nanostructures have high quantum yield, narrow emission peak width, tunable emission wavelength, and colloidal stability. Also provided are nanostructures prepared using the methods. And, nanostructure films and molded articles comprising the nanostructures are also provided.
Type:
Grant
Filed:
April 4, 2022
Date of Patent:
May 2, 2023
Assignee:
Nanosys, Inc.
Inventors:
Benjamin Newmeyer, Christian Ippen, Ruiqing Ma, Diego Barrera, Jesse Robert Manders
Abstract: To provide a ferrite sintered magnet having a high residual magnetic flux density (Br) and a high coercive force (HcJ), and also able to produce at a low cost. The ferrite sintered magnet includes a hexagonal M-type ferrite including A, R, Fe, and Co in an atomic ratio of A1-xRx(Fe12-yCoy)zO19. A is at least one selected from Sr, Ba, and Pb. R is La only or La and at least one selected from rare earth elements. 0.13?x?0.23, 10.80?(12?y)z?12.10, and 0.13?yz?0.20 are satisfied.
Abstract: A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.
Type:
Grant
Filed:
July 2, 2021
Date of Patent:
April 11, 2023
Assignee:
SAMSUNG ELECTRONICS CO., LTD.
Inventors:
Sung Woo Kim, Eun Joo Jang, Hyo Sook Jang, Hwea Yoon Kim, Yuho Won
Abstract: A group III nitride crystal, wherein the group III nitride crystal is doped with an N-type dopant and a germanium element, the concentration of the N-type dopant is 1×1019 cm?3 or more, and the concentration of the germanium element is nine times or more higher than the concentration of the N-type dopant.
Abstract: A ferrite sintered magnet 100 comprises M-type ferrite crystal grains 4 and multiple-crystal grain boundaries 6b surrounded by three or more of the M-type ferrite crystal grains 4. The ferrite sintered magnet 100 contains at least Fe, Ca, B, and Si, and contains 0.005 to 0.9 mass % of B in terms of B2O3. The multiple-crystal grain boundaries 6b contain Si and Ca, and in a case where the molar ratio of Ca to Si in the multiple-crystal grain boundaries 6b is represented by (Ca/Si)G, the following formula is satisfied. 0.1<(Ca/Si)G<0.
Abstract: Provided are a QLED and a method for manufacturing a quantum dot. The QLED comprises a quantum dot, the quantum dot comprises a quantum dot body and ligands arranged on an outer surface of the quantum dot body, wherein the ligands comprises at least one electrochemical inert ligand; a reduction potential of the at least one electrochemical inert ligand is greater than a potential of a bottom of conduction band of the quantum dot body; an oxidation potential of the at least one electrochemical inert ligand is less than a potential of top of a valence band the quantum dot body; and the electrochemical inert ligand accounts for at least 80% of all the ligands on the outer surface of the quantum dot body.
Abstract: An ether-bridged dication is provided with two monovalent cations bonded via a carbon chain having ether group(s). The ether-bridged dication, monovalent cations, and anions are contained together within an ionic liquid electrolyte which is applied to a charge storage device. The ether-bridged dication, the ionic liquid electrolyte, and the charge storage device have operational abilities at room temperatures or below, and a reachable working potential of 3.5 V.
Abstract: The present invention provides shortwave infrared ray emitting nanoparticles including a core having band gap energy of E1; an intermediate layer that is formed on the core and has band gap energy of E2; and an outer layer that is formed on the intermediate layer and has band gap energy of E3, in which the size of the E2 is smaller than the size of the E1 and the size of the E3. According to the present invention, it is possible to provide a solar cell which is improved in efficiency and life span and can be produced by a solution process.
Type:
Grant
Filed:
March 20, 2020
Date of Patent:
March 28, 2023
Assignee:
DAEGU GYEONGBUK INSTITUTE OF SCIENCE AND TECHNOLOGY (DGIST)
Inventors:
Sung Jun Lim, Gyu Dong Lee, Woo Hyeon Jeong
Abstract: A coated phosphor including: an inorganic phosphor particle; and a silicon oxide coating that coats the inorganic phosphor particle, wherein a molar ratio (O/Si) of an oxygen atom to a silicon atom in the silicon oxide coating through ICP emission spectroscopy of the coated phosphor is 2.60 or less.
Abstract: A method for manufacturing a sintered body, the method including heating a mixture that contains a plurality of particles of a metal oxide having a spinel-type structure, and a metal acetylacetonate under pressure at a temperature of from a melting point or higher of the metal acetylacetonate to 600° C. or lower, to form a sintered body that contains the metal oxide having the spinel-type structure.
Abstract: The present invention relates to thermally and chemically stable quantum dots encapsulated with functional polymeric ligands, a thermally stable quantum dot optical film using the encapsulated quantum dots, and a method for preparing the encapsulated quantum dots. The coating of the surface of the quantum dots with the polymer stabilizes the quantum dots and improves the durability and dispersibility of the quantum dot optical film, achieving markedly improved efficiency of photoluminescent quantum dot devices. Therefore, it is anticipated that the present invention will pave the way for practical use of quantum dots in a variety of light-emitting applications, particularly in high power light-emitting sources, to find commercial application in various fields, including displays, bioimaging, lightings, and photovoltaic cells.
Type:
Grant
Filed:
September 4, 2020
Date of Patent:
March 21, 2023
Assignee:
Korea University Research and Business Foundation
Abstract: A ferrite sintered magnet comprising an M type Sr ferrite having a hexagonal structure as a main phase, wherein the ferrite sintered magnet does not substantially comprise a rare earth element and Co, a content of B is 0.005 to 0.9% by mass in terms of B2O3, and a content of Zn is 0.01 to 1.2% by mass in terms of ZnO.
Abstract: A composition of matter includes an n-type semiconductor. At least a portion of the semiconductor has the crystal structure of the chemical compound represented by FeWO4. The portion of the semiconductor having the crystal structure of FeWO4 includes iron and tungsten. A photoanode can have a light-absorbing layer that includes or consists of the semiconductor. A solar fuels generator can include the photoanode.
Type:
Grant
Filed:
October 9, 2020
Date of Patent:
March 14, 2023
Assignee:
California Institute of Technology
Inventors:
John M. Gregoire, Santosh Suram, Lan Zhou, Aniketa A. Shinde