Patents Examined by Calom Lee
  • High frequency semiconductor device
    Patent number: 6166436
    Abstract: A high frequency semiconductor device includes: a substrate having a substantially flat principal surface, with a predetermined circuit pattern including at least an input line, an output line, and a ground electrode provided on the principal surface; and a transistor which has a drain electrode, a source electrode, and a gate electrode and is mounted on the substrate by a flip chip mounting. The source electrode and the ground electrode are connected to each other by a first bump in the flip chip mounting.
    Type: Grant
    Filed: April 15, 1998
    Date of Patent: December 26, 2000
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Masahiro Maeda, Morio Nakamura, Takayuki Yoshida, Masazumi Yamazaki