Abstract: A carbon fiber reinforced metal matrix composite is produced by depositing a metal boride coating on the surface of the fibers and subsequently immersing the fibers in a molten bath of the metal matrix material. The boride coating is formed by passing carbon fiber through a gaseous mixture of chlorides of the metal and boron in the presence of zinc vapor at elevated temperatures. The subsequent reaction deposits out a submicron lamina of metal boride on the carbon fibers serving to enhance wetting of the fibers by the molten metal, with the lamina preventing chemical reaction between the fibers and metal matrix materials and also providing a strong mechanical bond therebetween.

Abstract: A method of producing a light conductor structure or controllable coupler having a pair of light conductors embedded in a substrate of an electro-optical material and having electrodes arranged therebetween characterized by applying a layer of polycrystalline silicon on one surface of the substrate; etching away a portion of the layer to form a doping or diffusion mask; applying a layer of diffusion material on the mask and exposed silicon-free portions of the surface; diffusing the diffusion material into the silicon-free portions to form the light conductors; applying a layer of negative acting photo-lacquer on the layer of diffusion material and the conductors; projecting light through the substrate with the remaining portions of the silicon layer acting as a mask to expose the photo-lacquer; developing the layer of photo-lacquer to remove unexposed portions with the remaining portions of the lacquer covering the light conductors; removing the remaining portions of the silicon layer; applying a metal layer

Abstract: A method and structure for polysilicon lines which include a silicide layer for providing a low sheet resistance. The invention may be employed in a polysilicon gate MOSFET process for integrated circuits as well as other integrated structures. In the method a first layer of polysilicon is deposited followed by a deposition of a metal of the silicide forming type. Another polysilicon layer is then deposited on top of the silicide forming metal to produce a three layer structure. The three layer structure is subjected to heat, for example, during the reoxidation step in a gate fabrication process, the metal reacts with the polysilicon at two reaction fronts to form a silicide. The resultant silicide has a much lower resistivity than doped polysilicon and therefore provides a second conductive layer which can be used more compatibly and efficiently in connection with the normal metal layer employed in integrated circuits to give a two-dimensional degree of freedom for the distribution of signals.

Abstract: A method of improving the thermal emmissivity of a cathode heater wire to allow lower temperature operation of the heater without an attendant lowering in the cathode operating temperature, in which method the surface of a tungsten or molybdenum wire is oxidized, then coated with a salt of a refractory metal, and finally heated to reduce the salt and oxide to their metallic forms thereby causing the heater wire to be roughened and darkened.

Abstract: A method for metallizing a phosphor screen for a cathode ray tube including the steps of forming a volatilizable substrate on the surface of the phosphor screen and depositing a metal layer on the substrate, followed by heating for volatilizing the substrate, said substrate comprising a laminate of superposed layers respectively representing different organic materials having different thermal decomposition points. This disclosed method is advantageous in that the substrate can be volatilized without causing blistering of the metal layer and the formed metal layer is enabled to reflect light more effectively.

Abstract: A method to produce an electrode by coating at least a portion of a valve metal substrate sequentially with first and second liquid solutions containing different proportions of dissolved ruthenium and valve metal values; the second solution having a greater valve metal to ruthenium weight ratio than the first solution. At least a portion of the substrate is contacted with a first liquid solution containing ruthenium and the valve metal in amounts of from about 1 to about 50 milligrams per milliliter of the solution. The weight ratio of the valve metal to ruthenium in the first solution is from about 1:4 to about 2:1. The so-contacted surface is heated to oxidize the deposited ruthenium and valve metal values. Thereafter at least the oxidized surface is contacted with a second solution containing dissolved valve metal and ruthenium values in a weight ratio of from about 20:1 to about 2:1 and heated to oxidize the deposited metal values.

Abstract: Low friction material particularly adapted for use at high temperatures in the regenerator portion of gas turbine engines, the material comprising a work surface layer on a substrate, the work surface layer prior to a break-in period comprising an iron oxide (wustite--FeO, magnetite--Fe.sub.3 O.sub.4, or hematite--Fe.sub.2 O.sub.3) matrix containing an interspersed trapping material in the interstices thereof, the trapping material comprising an inorganic compound such as a salt or oxide; and subsequent to the break-in period, the work surface layer acquires a substantially continuous film of hematite--Fe.sub.2 O.sub.3 iron oxide in which the hexagonal Fe.sub.2 O.sub.3 crystals or cells provide a highly oriented structure. Transfer of the oriented film to the mating surface occurs during run-in.

Abstract: In a bubble chip, increased spacing between a circuit overlay and a sheet of magnetic bubble material is provided at selected locations for particular circuit elements from which bubbles are to be deflected by magnetic repulsion. Differential spacing is achieved in one embodiment by means of a stratified spacing layer composed of the conventional nonmagnetic spacing layer plus a layer of nonmagnetic metal etched to form a mesa pattern which may include electrical control leads where necessary.

Abstract: Micropattern devices, such as electronic microcircuits, are produced by establishing on a substrate base a film of resist material, such as a polymeric film, containing dispersed therethrough a substantial proportion of an enzyme and then producing a pattern of a metal by reactions depending upon presence of the enzyme.

Abstract: Articles exhibiting a micropattern carried by a surface of a support, typically microdevices comprising a micropattern of a functional material on or in a substrate of a dissimilar material, are produced by a method employing a microsubstrate comprising a substrate base, a protein layer which comprises at least a compressed monolayer of a denatured non-fibrous protein on the base, and a masking film overlying the protein layer, the material of the masking film being such as to be modified by radiant energy so as to be removable from the protein layer where irradiated. The method is flexible in the sense that it is possible to proceed via either a positive or a negative of the desired micropattern and to build a more extensive, or more complex, micropattern from an initial relatively simple micropattern.

Abstract: In a method of doping impurities comprising mixing a carrier gas, a semiconductor compound gas and a doping gas and leading the mixed gas to a reaction chamber to form a semiconductor layer or a semiconductor oxide layer doped with impurities on a substrate inside the chamber, a part of the doping gas before mixing the doping gas with the other gases is taken and led to a gas analyzer and impurity concentration in the doping gas is monitored to control the impurity concentration in the doping gas.

Abstract: A substrate article coated with a pinhole free film of silicon nitride produced by reacting silane with a nitrogen containing compound which upon decomposition produces nascent nitrogen and sufficient amounts of a carrier gas that is inert to the reactants and heating said substrate to a temperature above about 500.degree. C to cause the deposition of silicon nitride film on said substrate.

Abstract: An electrostatic recording material having a good workability and a very good recording characteristic is prepared by coating such a base sheet as paper, plastic film, metal plate, etc.

Abstract: An electrostatic recording material having a good workability and a very good recording characteristic is prepared by coating such a base sheet as paper, plastic film, metal plate, etc. with an aqueous dispersion comprising (A) 100 parts by weight of at least one water-insoluble polymer comprising at least one monomer selected from ethylenic monomers and conjugated diolefinic monomers, and (B) 1-200 parts by weight of at least one water-soluble salt of polymer containing carboxyl groups by means of an air knife coater, roll coater, etc. It is possible to use not more than 6 parts by weight of the heretofore well-known nonionic emulsifier and/or the well-known anionic emulsifier together with said component.

Abstract: A cover layer for flexible circuits which provides increased flexibility. The cover layer encapsulates a flexible circuit having a plurality of spaced conductors on a flexible insulating substrate. The cover layer is a tri-layered laminate having a first layer of insulating film, a second intermediate layer of a thermosetting adhesive, and a third layer of a phenolic resin adhesive. The cover layer is bonded to the flexible circuit with the third layer of phenolic resin adhesive being contiguous the conductors.

Abstract: Photoconductive layers particularly useful with integrated circuits are directly made from compositions selected from the group consisting of zinc sulfide (ZnS), cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium telluride (CdTe), zinc sulfide selenide (ZnS.sub.x Se.sub.1-x), and cadmium sulfide selenide (CdS.sub.x Se.sub.1-x), and cadmium sulfide telluride (CdS.sub.x Te.sub.1-x). Powders of component materials for the photoconductive layer are mixed with a copper halide powder such that the copper halide is between about 0.1 and 5.0% and preferably between about 0.1 and 2.0% by weight of the total mixture. The mixed powder then is formed into at least one pellet and the pellet used as an evaporant source for vacuum deposition of a photoconductive layer onto a prepared substrate at a rate greater than 10 nanometers/minute and preferably greater than 500 nanometers per minute. The photoconductive layer and substrate are then baked in an oxygen-rich atmosphere at a temperature between 300.degree. and 550.

Abstract: The adherence of thin-film conductors to supporting substrates, and therefore the strength of external lead bonds made to the conductors, is increased by forming the conductors first and then heat treating them in air. The conductors may be formed from layers of titanium, palladium and gold sequentially deposited on the substrate or, in order to reduce the amount of gold, a portion of it may be replaced by copper and nickel.

Abstract: A microstrip board comprising a gold film which contains about at least 1/2 weight per cent of aluminum bonded to a non-electrical conducting oxide is prepared by simultaneously evaporating the gold and aluminum onto the non-electrical conducting oxide and thereafter optionally heating the film thus formed.

Abstract: A method for configurating thin layers, particularly in thin film circuits, wherein a layer to be configurated is irradiated with an electron beam passing through a mask to obtain a configuration corresponding to the configuration of selected portions of such a mask, and a mask for use therein, as well as a method of making such mask, in which the mask is so constructed that, in use, the electron beam completely radiates the geometric shadow areas of the supporting elements on the thin film.

Abstract: Separate polarizing electrodes are attached to the opposite surfaces of a thermoplastic film. A high D. C. voltage is then applied across these electrodes to polarize the film to produce an electric element, such as an electret, piezoelectric or pyroelectric element. Portions of the polarizing electrodes are then selectively removed to form the operating electrodes required for the electric element.