Abstract: Process and apparatus for dewatering a fibrous material web. The process includes guiding the fibrous material web through a dewatering zone, and directing a plurality of gas pressure pulses of a pressurized displacement gas one after the other onto a surface of the fibrous material web within the dewatering zone. The apparatus includes a device for forming a plurality of gas pressure pulses which are arranged one after the other within the dewatering zone. The plurality of gas pressure pulses are directed onto a surface of the fibrous material web.

Abstract: A closure tab is provided and includes a first substrate. A second substrate is adhesively attached to the first substrate. The second substrate has mechanical closure material formed thereon. A compression bond pattern is applied to the first substrate and the second substrate. The compression bond pattern includes at least one outwardly extending protrusion. The compression bond pattern may include, for example, circular bond points, stripes, or a decorative element. A method is also provided wherein the second substrate is compressed onto the first substrate by a patterned roller. The second substrate may be compressed onto the first substrate by a plurality of pins spaced in alternating offset rows.

Abstract: A pattern transfer apparatus according to one embodiment includes a transfer region selecting part that performs operation in which when performing pattern transfer from a template provided with N transfer regions (N is an integer of 2 or larger) to a transferring substrate a plurality of times, 1 to N?1 transfer regions, which are to be used to perform the transfer to regions of the transferring substrate corresponding to part of the N transfer regions, are selected such that the number of the transfer to be performed using each of the N transfer regions is evened out.

Abstract: A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.