Abstract: A vertical cavity surface emitting semiconductor laser is formed with a multilayer structure on a semiconductor substrate that includes an active region layer, a central core, and an antiresonant reflecting waveguide ring surrounding the central core. The ring includes a region formed to have an effective higher index than the central core and sized to provide antiresonant lateral waveguiding confinement of a fundamental mode wavelength. Reflectors formed above and below the active region layer provide vertical confinement. The antiresonant reflecting ring may be formed either as a full ARROW structure including a quarter wavelength high effective index region and a quarter wavelength low effective index region or as a simplified ARROW structure having a single quarter wavelength high effective index region.

Abstract: Semiconductor laser with a tunable gain spectrum. Said laser comprises an active zone having at least one active quantum well (AQW), which emits a laser radiation during the introduction of carriers into the active zone and at least one collection quantum well (CQW1, CQW2) on either side of the active well, for collecting and confining part of the carriers introduced. Means for distributing carriers in the collection wells are provided for creating a space charge field for modifying, during the emission of radiation and by an electrooptical effect, the gain spectrum of said active well. Application to optical telecommunications.