Patents Examined by Chandra C. Chaudhari
  • Method for fabricating a thin film transistor
    Patent number: 5395804
    Abstract: A method for fabricating a thin film transistor formed on an insulator is disclosed. The method includes the steps of forming a non-single crystal silicon film on the insulator, forming a polysilicon film on the insulator by thermally treating the non-single crystal silicon film in an atmosphere of a gas including hydrogen halogenide, and forming a channel region in the polysilicon film.
    Type: Grant
    Filed: March 29, 1993
    Date of Patent: March 7, 1995
    Assignee: Sharp Kabushiki Kaisha
    Inventor: Tohru Ueda