Abstract: An integrated circuit (IC) device includes a functional circuit electrically coupled to a first power supply node and operable by a first power supply voltage on the first power supply node, and a power control circuit including a first transistor and a second transistor of different types. The first transistor includes a gate terminal configured to receive a control signal, a first terminal electrically coupled to the first power supply node, and a second terminal electrically coupled to a second power supply node. The second transistor includes a gate terminal configured to receive the control signal, and first and second terminals configured to receive a predetermined voltage. The first transistor is configured to, in response to the control signal, connect or disconnect the first and second power supply nodes to provide or cutoff power supply to the functional circuit.

Abstract: A semiconductor structure including nanosheet stacks on a substrate, each nanosheet stack including alternating layers of sacrificial semiconductor material and semiconductor channel material and a crystallized gate dielectric layer surrounding the semiconductor channel layers of a first subset of the nanosheet stacks, a dipole layer on top of the crystallized gate dielectric and surrounding the layers of semiconductor channel material of the first subset of the nanosheet stacks and a gate dielectric modified by a diffused dipole material surrounding the semiconductor channel layers of a second subset of the nanosheet stacks.