Abstract: A semiconductor material and a method for forming the same, said semiconductor material having produced by a process comprising melting a noncrystal semiconductor film containing therein carbon, nitrogen, and oxygen each at a concentration of 5.times.10.sup.19 atoms.cm.sup.-3 or lower, preferably 1.times.10.sup.19 atoms.cm.sup.-3 or lower, by irradiating a laser beam or a high intensity light equivalent to a laser beam to said noncrystal semiconductor film, and then recrystallizing the thus molten amorphous silicon film. The present invention provides thin film semiconductors having high mobility at an excellent reproducibility, said semiconductor materials being useful for fabricating thin film semiconductor devices such as thin film transistors improved in device characteristics.

Abstract: A photoresist comprising a light sensitive component and an alternating copolymer resin formed by condensing a preformed bishydroxymethylated compound and a reactive phenol, in the absence of an aldehyde. Additional useful resins may be formed by further reacting the alternating copolymer with a second reactive phenol in the presence of an aldehyde to form substantially block copolymers. The use of these resins in photoresist formulations leads to improved thermal properties, etch resistance and photospeed.

Abstract: A novolak resin composition comprising at least one unit of the reaction product of a para-, para-bonded bisphenol having formula (A): ##STR1## wherein R.sub.1 =hydrogen, lower alkyl group having 1-4 carbon atoms, halogen, or lower alkoxy group having 1-4 carbon atoms; whereinR.sub.2 =hydrogen or lower alkyl group having 1-4 carbon atoms; and whereinX is selected from the group consisting of: CH.sub.2, CH(CH.sub.3), C(CH.sub.3).sub.2, O, and S;with a bismethylol monomer selected from a difunctional ortho-, ortho-phenolic bismethylol of Formula (B), a difunctional ortho-, para-phenolic bismethylol of Formula (C): ##STR2## wherein R.sub.3 is selected from CH.sub.3, CH.sub.2 CH.sub.3, Cl, and Br; and whereinR.sub.4 is selected from H and CH.sub.3.

Abstract: A water soluble built-on mask layer is provided on a photoresist composition disposed on a substrate. The photoresist comprises an o-quinone diazide and a novolak or paravinyl phenol resin. The built-on mask layer comprises a water soluble, photobleachable diazonium salt, a coupler for the diazonium salt and an acidic, polymeric, film forming resin such as polystyrene sulfonic acid.

Abstract: A method of preparing a color proof from a silver halide color photographic light-sensitive material and a black-and-white halftone dot image is disclosed, wherein said light-sensitive material has on a support the photographic component layers including silver halide emulsion layers each having different spectral sensitivities, and one of said silver halide emulsion layers comprises a magenta coupler represented by Formula M-I; ##STR1## wherein Z represents a group of non-metal atoms necessary to form a nitrogen-containing heterocyclic ring including a substituted one; X represents one selected from the group consisting of a hydrogen atom and a group capable of splitting off upon a reaction with an oxidized product of a developer; and R represents one selected from the group consisting of a hydrogen atom and a substituent.