Abstract: A method of forming an antifuse device. According to the preferred method of the present invention, a first metal layer comprising a first bulk conductive layer and the top capping layer is formed. Next, the capping layer is etched into a first patterned capping layer. An antifuse layer is then formed over the patterned capping layer and over the first bulk conductive layer. Next, a second metal layer comprising a bottom barrier layer and a second bulk conductive layer is formed on the antifuse layer. The second metal layer and the antifuse layer are then etched to form a metal post on the capping layer. The first bulk conductive layer is then etched in alignment with the patterned capping layer to form a first metal interconnect.