Abstract: An extreme ultraviolet light generation device configured to generate extreme ultraviolet light by irradiating a target containing tin with a pulse laser beam includes a chamber container, a hydrogen gas supply unit configured to supply hydrogen gas into the chamber container, a heat shield disposed between the chamber container and a predetermined region in which the target is irradiated with the pulse laser beam inside the chamber container, a first cooling medium flow path disposed in the chamber container, a second cooling medium flow path disposed in the heat shield, and a cooling device configured to supply a first cooling medium to the first cooling medium flow path and supply a second cooling medium to the second cooling medium flow path so that a temperature of the heat shield becomes lower than a temperature of the chamber container.

Abstract: An extreme ultraviolet light generation apparatus includes: an optical base; and a chamber module replaceable from the optical base. The chamber module includes a chamber in which extreme ultraviolet light is generated, a condenser mirror disposed inside the chamber and configured to condense extreme ultraviolet light generated inside the chamber, a window configured to transmit, into the chamber, a laser beam introduced into the optical base, and having a function to seal up the chamber, and a laser beam condensation optical system configured to condense the laser beam having transmitted through the window.

Abstract: Embodiments described herein provide a method of large area lithography to decrease widths of portions written into photoresists. One embodiment of the method includes projecting an initial light beam of a plurality of light beams at a minimum wavelength to a mask in a propagation direction of the plurality of light beams. The mask has a plurality of dispersive elements. A wavelength of each light beam of the plurality of light beams is increased until a final light beam of the plurality of light beams is projected at a maximum wavelength. The plurality of dispersive elements of the mask diffract the plurality of light beams into order mode beams to produce an intensity pattern in a medium between the mask and a substrate having a photoresist layer disposed thereon. The intensity pattern having a plurality of intensity peaks writes a plurality of portions in the photoresist layer.

Abstract: The invention relates to a bearing device arranged to support in a vertical direction a first part of an apparatus with respect to a second part of the apparatus, comprising a magnetic gravity compensator.

Abstract: A method for temperature control of a component that is transferable between a first system and a second system includes: ascertaining a temperature drift of a temperature of the component that is to be expected after transfer of the component from the first system into the second system; and modifying a temperature prevailing in the first system and/or a temperature prevailing in the second system such that the temperature drift that is actually occurring after transfer of the component from the first system into the second system is reduced with respect to the expected temperature drift.

Abstract: Methods for manufacturing a semiconductor structure are provided. A substrate is provided. A first lithography is performed according to a first layer mask, to form a plurality of first photonic crystals with a first pitch on a first area of a layer above the substrate. A second lithography is performed according to a second layer mask, to form a plurality of second photonic crystals with a second pitch on a second area of the layer. A light is provided to illuminate the first and second photonic crystals. Light reflected by the first and second photonic crystals or transmitted through the first and second photonic crystals is received. The received light is analyzed to detect overlay-shift between the first photonic crystals corresponding to the first layer mask and the second photonic crystals corresponding to the second layer mask.

Abstract: A method of dislodging contamination from a part of an apparatus used in a patterning process, the method including: providing a cleaning substrate into contact with the part of the apparatus while the part is attached to the apparatus, the cleaning substrate comprising a material configured to chemically react with the contamination; and dislodging contamination on the part of the apparatus by chemical reaction between the material and the contamination.

Abstract: A projector moves a first imaging lens and a second imaging lens in a direction that intersects the optical axis of an imaging section to adjust the imaging range of the imaging section and moves the first imaging lens and the second imaging lens in the direction that intersects the optical axis of the imaging section to switch the imaging lens located in a position corresponding to the imaging section from one to another.

Abstract: An eyepiece unit with optical filters includes a set of waveguide layers including a first waveguide layer and a second waveguide layer. The first waveguide layer is disposed in a first lateral plane and includes a first incoupling diffractive element disposed at a first lateral position, a first waveguide, and a first outcoupling diffractive element. The second waveguide layer is disposed in a second lateral plane adjacent to the first lateral plane and includes a second incoupling diffractive element disposed at a second lateral position, a second waveguide, and a second outcoupling diffractive element. The eyepiece unit also includes a set of optical filters including a first optical filter positioned at the first lateral position and operable to attenuate light outside a first spectral band and a second optical filter positioned at the second lateral position and operable to attenuate light outside a second spectral band.

Abstract: A pellicle for a lithographic device and a method for its manufacture. The pellicle comprises a carbon-based film having a thickness of between 0.1 nm and 10 nm and at least one layer of cross-linked aromatic molecules, heteroaromatic molecules, or polyyne-based or polyene-based amphiphilic molecules. The carbon-based film has a periphery and a center portion and the center portion is transparent to the radiation beam. A support structure is coupled at least to the periphery of the carbon-based film.

Abstract: A projection-type display device includes: a light source; a dust-proof case; heat-dissipating fins; a heat-dissipation fan that causes cooling air to flow into the heat-dissipating fins; a prism unit that is provided inside the dust-proof case and that separates light from the light source into a multiplicity of illumination light beams; an internal circulation fan; heat-receiving fins; and heat pipes that connect the heat-dissipating fins and the heat-receiving fins. The heat-receiving fins and the heat-dissipating fins are both formed in a substantially rectangular parallelepiped shape, each having, as cooling air inflow surfaces that are effective in heat dissipation or heat reception, a first surface and a second surface whose area is greater than the first surface. The cooling airflow inside the dust-proof case that is supplied by the internal circulation fan flows from the first and second surfaces of the heat-receiving fins.

Abstract: A positioning system for positioning an object. The positioning system includes a stage, a balance mass and an actuator system. The stage is for holding the object. The actuator system is arranged to drive the stage in a first direction while driving the balance mass in a second direction opposite to the first direction. The stage is moveable in the first direction in a movement range. When the stage is moving in the first direction and is at an end of the movement range, the positioning system is arranged to collide the stage frontally into the balance mass.

Abstract: Provided is an information processing device including an image analysis unit that analyzes content of an input image projected by a projection device, and a projection position determination unit that determines a projection area in a projection space onto which the input image is projected by the projection device on the basis of an analysis result obtained by analyzing the input image.

Abstract: A method for exposing a wafer substrate includes forming a reticle having a device pattern. A relative orientation between the device pattern and a mask field of an exposure tool is determined based on mask field utilization. The reticle is loaded on the exposure tool. The wafer substrate is rotated based on an orientation of the device pattern. Radiation is projected through the reticle onto the rotated wafer substrate by the exposure tool, thereby imaging the device pattern onto the rotated wafer substrate.

Abstract: A support structure having a vertical element supporting a set of cameras associated with a vehicle measurement or inspection system together with at least one target structure required for realignment or recalibration of onboard vehicle safety system sensors. A camera crossbeam carried by the support structure locates the set of cameras as required to view a vehicle undergoing measurement or inspection. The target structure is affixed to the vertical element of the support structure, at an elevation suitable for observation by at least one vehicle onboard sensors during a realignment or recalibration procedure. A set of rollers facilitates positioning of the target structure on a supporting floor surface during a realignment or recalibration procedure.

Abstract: An illumination device has a plurality of first lens elements to collect incident light beams, and a field lens to guide each of the light beams that have passed through the plurality of first lens elements to an entire region of a specific area. The plurality of first lens elements include at least two first lens elements having different lens diameters from each other. When one of the two first lens elements has a lens diameter d and a focal length f, another of the two first lens elements has a lens diameter k×d (where k is a value larger than zero but other than 1) and a focal length k×f.

Abstract: A projector includes a cooler cooling a cooling target based on transformation of refrigerant into gas. A refrigerant generator of the cooler includes a moisture absorbing and releasing member, a first blower, a heat exchanger, a heater, a second blower, a first circulation duct through which the air sent to the moisture absorbing and releasing member from the heat exchanger passes, and a second circulation duct through which the air sent to the heat exchanger from the moisture absorbing and releasing member passes. The second circulation duct includes a second opening disposed in a position where the second opening and a first opening of the first circulation duct sandwich the moisture absorbing and releasing member in a predetermined direction. An opening area of the second opening is smaller than an opening area of the first opening. When viewed along the predetermined direction, the entire second opening overlaps the first opening.

Abstract: Systems and methods that include providing for measuring a first topographical height of a substrate at a first coordinate on the substrate and measuring a second topographical height of the substrate at a second coordinate on the substrate are provided. The measured first and second topographical heights may be provided as a wafer map. An exposure process is then performed on the substrate using the wafer map. The exposure process can include using a first focal point when exposing the first coordinate on the substrate and using a second focal plane when exposing the second coordinate on the substrate. The first focal point is determined using the first topographical height and the second focal point is determined using the second topographical height.

Abstract: An illumination optical unit for EUV projection lithography serves for obliquely illuminating an illumination field, in which an object field of a downstream imaging catoptric optical unit and a reflective object to be imaged can be arranged. A pupil generating device of the illumination optical unit is embodied so that an illumination pupil results, which brings about a dependency of an imaging telecentricity against a structure variable of the object to be imaged. This dependency is such that a dependency of the imaging telecentricity against the structure variable of the object to be imaged on account of interaction of the oblique illumination with structures of the object to be imaged is at least partly compensated for. An optical system for EUV projection lithography also has an imaging catoptric optical unit alongside an illumination optical unit and can additionally have a wavefront manipulation device.

Abstract: An extreme ultraviolet light generation apparatus includes: a chamber having an internal space in which a laser beam is condensed and plasma generation occurs at a focusing position of the laser beam; a condensing mirror configured to condense extreme ultraviolet light generated through the plasma generation; and a magnetic field generation unit configured to generate a magnetic field. The condensing mirror includes a substrate, a reflective layer, and a protective layer. The protective layer includes a first protective layer disposed in a first region, and a second protective layer disposed in a second region. A material of the first protective layer is less dense than a material of the second protective layer. The material of the second protective layer has a transmittance for the extreme ultraviolet light higher than that of the material of the first protective layer.