Abstract: An object of the present disclosure is to propose a height measuring device which performs height measurement with high accuracy at each height with a relatively simple configuration even when the sample surface height changes greatly. A height measuring device which includes a projection optical system configured to project a light ray onto an object to be measured and a detection optical system including a detection element configured to detect a reflected light ray from the object to be measured, where the projection optical system includes a light splitting element (103) which splits a trajectory of the light ray with which the object to be measured is irradiated into a plurality of parts, and thus it is possible to project a light ray to a predetermined position even when the object to be measured is located at a plurality of heights, is proposed.

Abstract: An operating method of an extreme ultraviolet (EUV) lithography device includes defining a target image to render an illumination system, assigning priorities to respective positions of facets of a pupil facet mirror corresponding to the target image, assigning a mirror according to the assigned priorities using linear programming, generating the illumination system by selecting one of the facets of the pupil facet mirror based on a symmetry criterion, and converting mirror assignment information and source map information corresponding to the selected facet into a form recognizable by an EUV scanner.

Abstract: A method of manufacturing a pellicle for a lithographic apparatus, the method including locally heating the pellicle using radiative heating, and depositing coating material simultaneously on both sides of the pellicle, and pellicles manufactured according to this method. Also disclosed is the use of a multilayer graphene pellicle with a double-sided hexagonal boron nitride coating in a lithographic apparatus.

Abstract: A method includes receiving a device design layout and a scribe line design layout surrounding the device design layout. The device design layout and the scribe line design layout are rotated in different directions. An optical proximity correction (OPC) process is performed on the rotated device design layout and the rotated scribe line design layout. A reticle includes the device design layout and the scribe line design layout is formed after performing the OPC process.

Abstract: An optical apparatus, which illuminates a first area with light from a light source while the first area is longer in a second direction intersecting a first direction than in the first direction, includes a collector optical member which is arranged in an optical path between the light source and the first area, and condenses the light from the light source to form a second area in a predetermined plane, the second area being longer in a fourth direction intersecting a third direction than in the third direction; and a first fly's eye optical member which is provided within the predetermined plane including the second area, and has a plurality of first optical elements guiding the light of the collector optical member to the first area.

Abstract: An optical proximity correction (OPC) device and method is provided. The OPC device includes an analysis unit, a reverse pattern addition unit, a first OPC unit, a second OPC unit and an output unit. The analysis unit is configured to analyze a defect pattern from a photomask layout. The reverse pattern addition unit is configured to provide a reverse pattern within the defect pattern. The first OPC unit is configured to perform a first OPC procedure on whole of the photomask layout. The second OPC unit is configured to perform a second OPC procedure on the defect pattern of the photomask layout to enhance an exposure tolerance window. The output unit is configured to output the photomask layout which is corrected.

Abstract: An extreme ultraviolet light generation apparatus includes a target supply unit configured to output a droplet target into a chamber device, a prepulse laser light irradiation system configured to irradiate the droplet target with prepulse laser light having linear polarization to generate a diffusion target, and a main pulse laser light irradiation system configured to irradiate the diffusion target with main pulse laser light to generate extreme ultraviolet light. Here, a cross section perpendicular to an optical axis of the main pulse laser light when being radiated to the diffusion target having a shape longer in a polarization direction of the prepulse laser light when being radiated to the droplet target than in directions other than the polarization direction.

Abstract: A method and a system for inspecting an extreme ultra violet mask and a mask pod for such masks is provided. An EUV mask inspection tool inspects a mask retrieved from a mask pod placed on the load port positioned exterior of the mask inspection tool. The inspection process is performed during a selected period of time. After the inspection process is initiated, a robotic handling mechanism such as a robotic arm or an AMHS picks up the mask pod and inspects the mask pod for foreign particles. A mask pod inspection tool determines whether the mask pod needs cleaning or replacing based on a selected swap criteria. The mask pod is retrieved from the mask pod inspection tool and placed on the load port before the selected period of time lapses. This method and system promotes a reduction in the overall time required for inspecting the mask and the mask pod.

Abstract: The invention provides an inspection apparatus for inspecting an object, the apparatus comprising: a measurement system configured to measure: —a first parameter of the object across an area of interest of the object, and —a second parameter, different from the first parameter, of the object at a plurality of locations on the object; a stage apparatus configured to position the object relative to the measurement system during a measurement of the first parameter, wherein the measurement system is configured to measure the second parameter at the plurality of different locations during the measurement of the first parameter and wherein the stage apparatus is configured to position the object relative to the measurement system based on a compliance characteristic of the stage apparatus.

Abstract: In embodiments of a digital lithography system, physical design data prepared at a data prep server in a hierarchical data structure. A leaf node comprises a repeater nod, comprising a bitmap image and a plurality of locations at which the bitmap appears in a physical design. At an EYE server, a repeater node bitmap is adjusted based upon, for example, spatial light modulator rotational adjustment and substrate distortion. The adjusted repeater node and the plurality of locations in which the adjusted repeater appears is compared to the repeater of the data prep server and its plurality of locations. In further embodiments, a rasterizer generates a checksum of bitmap to be printed to a substrate, from the EYE server bitmap. The checksum is compared to a checksum of the EYE server bitmap.

Abstract: An apparatus for determining a condition associated with a pellicle for use in a lithographic apparatus, the apparatus including a sensor, wherein the sensor is configured to measure a property associated with the pellicle, the property being indicative of the pellicle condition.

Abstract: An optical assembly for an autofocus imaging system for capturing at least one image of an object appearing in an imaging field of view (FOV) is provided. The optical assembly includes a front aperture along an optical axis and a front lens group along the optical axis that receives light from the object of interest. The position of the front lens group is adjustable to change a focal distance of the optical assembly. The optical assembly further includes an actuator physically coupled to the front lens group that adjusts the position of the front lens. A rear lens group is disposed along the optical axis to receive the light from the front lens group, and an imaging sensor is disposed at a back focal distance of the rear lens group, to detect the light.

Abstract: The present application relates to an apparatus and to a method for removing at least a single particulate from a substrate, especially an optical element for extreme ultraviolet (EUV) photolithography, wherein the apparatus comprises: (a) an analysis unit designed to determine at least one constituent of a material composition of the at least one single particulate; and (b) at least one gas injection system designed to provide a gas matched to the particular constituent in an environment of the at least one single particulate; (c) wherein the matched gas contributes to removing the at least one single particulate from the substrate.

Abstract: A method for measuring a substrate for semiconductor lithography using a measuring device, wherein the measuring device comprises a recording device for capturing at least a partial region of the substrate and, wherein the distance between the substrate and an imaging optical unit of the recording device is varied while the partial region is captured by the recording device.

Abstract: A temperature control device and a temperature control method are provided. The temperature control device is located at an interface between a photoresist coating and developing machine and a lithography machine and includes: a temperature detection device, a gas flow generator and a controller. The temperature detection device and the gas flow generator are respectively connected to the controller. The temperature detection device is configured to detect an actual temperature at the interface in real time. The gas flow generator is at least configured to generate a gas flow sealing knife around the interface. The controller is configured to control the gas flow generator to generate the gas flow sealing knife responsive to that the actual temperature detected by the temperature detection device is not equal to the target temperature, to control the actual temperature at the interface to reach the target temperature through the gas flow sealing knife.

Abstract: Described is a telecentric illuminator that can be used, for example, in a mask aligner system for semiconductor wafer processing or as part of a solar simulator system for characterization of solar cells. The telecentric illuminator includes a tapered optic, a lens group having a plurality of lenses and an aperture stop, and a hybrid Fresnel lens. The Fresnel lens is disposed at a position along the optical axis of the telecentric illuminator to generate a telecentric image of the aperture stop at an illumination plane. The Fresnel lens may have a curved central portion and the aperture stop may be apodized to achieve desired illumination characteristics and improve the resolution of a mask aligner system.

Abstract: A system for positioning, a stage system, a lithographic apparatus, a method for positioning and a method for manufacturing a device in which use is made of a stage system. The stage system has a plurality of air bearing devices. Each air bearing device has: a gas bearing body which has a free surface, a primary channel which extends through the bearing body and has an inlet opening in the free surface, and a secondary channel system which extends through the bearing body and which has a plurality of discharge openings in the free surface. The flow resistance in the secondary channel system can be higher than the flow resistance in the primary channel.

Abstract: An exposure machine and an exposure method are provided in some embodiments of the present disclosure. The exposure machine includes: a detection module, configured to detect whether there are attachments on the surface of a reticle; a cleaning device, configured to clean the attachments on the surface of the reticle; and an exposure module, configured to expose the reticle having no attachments detected.

Abstract: A target debris collection device for extreme ultraviolet (EUV) light source apparatus, includes a baffle body extending within an EUV vessel between a collector and an outlet port of the EUV vessel to allow EUV light reflected from the collector to pass through an internal transmissive region thereof, a discharge plate provided in a first end portion of the baffle body adjacent to the collector to collect the target material debris on an inner surface of the baffle body, a guide structure to guide the target material debris collected in the discharge plate to a collection tank, and a first heating member provided in the guide structure to prevent the target material debris from being solidified.

Abstract: Degradation of the reflectivity of one or more reflective optical elements in a system for generating EUV radiation is reduced by the controlled introduction of a gas into a vacuum chamber containing the optical element. The gas may be added to the flow of another gas such as hydrogen or alternated with the introduction of hydrogen radicals.