Patents Examined by Christoper Johnson
  • Nonvolatile semiconductor memory device and method of manufacturing the same
    Patent number: 9087715
    Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a fin-type stacked layer structure having memory cells, and a beam connected to an end portion of the structure. Each of the structure and the beam includes semiconductor layers stacked in a perpendicular direction. The beam includes a contact portion provided at one end of the beam, and a low resistance portion provided between the contact portion and the end portion of the structure.
    Type: Grant
    Filed: July 12, 2012
    Date of Patent: July 21, 2015
    Assignee: KABUSHIKI KAISHA TOSHIBA
    Inventors: Haruka Kusai, Kiwamu Sakuma, Shosuke Fujii, Masumi Saitoh, Masahiro Kiyotoshi