Abstract: A method of spray deposition for inorganic nanocrystal solar cells comprising subjecting a first solution of CdTe or CdSe nanocrystals to ligand exchange with a small coordinating molecule, diluting the first solution in solvent to form a second solution, applying the second solution to a substrate, drying the substrate, dipping the substrate in a solution in MeOH of a compound that promotes sintering, washing the substrate with iPrOH, drying the substrate with N2, and heating and forming a film on the substrate. An inorganic nanocrystal solar cell comprising a substrate, a layer of metal, a layer of CdTe, a layer of CdSe, and a layer of transparent conductor. An inorganic nanocrystal solar cell comprising a transparent conductive substrate, a layer of CdSe, a layer of CdTe, and a Au contact.

Abstract: A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.

Abstract: The invention relates to the manufacturing process of a solar cell (1) with back contact and passivated emitter, comprising a dielectric stack (10) of at least two layers consisting of at least a first dielectric layer (11) made of AlOx in contact with a p-type silicon layer (3), and a second dielectric layer (13) deposited on the first dielectric layer (11). Besides, the method of manufacturing comprising a formation step of at least one partial opening (15) preferably by laser ablation into the dielectric stack (10), sparing at least partially the aforementioned first dielectric layer.

Abstract: The present invention relates to an exhaust system for a combustion engine, more preferably of a road vehicle, with at least one exhaust gas-conducting component having a ring-shaped closed inner wall in circumferential direction, whose inner side is exposed to the exhaust gas. The energetic efficiency of the combustion engine can be improved with at least one thermoelectric generator which converts heat into electric energy and which is arranged on an outer side of the inner wall.

Abstract: This invention includes a Fresnel lens assembly positioned relative to an energy receiver, onto which the lens assembly focuses sunlight for collection and conversion. The Fresnel lens assembly includes a thin polymeric film with prisms molded into or attached to the film. This invention also includes an articulating energy receiver which can move closer to or farther away from the lens depending on the longitudinal angle of incidence of the sunlight relative to the lens, to maintain the best focus of sunlight on the energy receiver. The prisms in the present lens are specified to provide acceptable optical performance in the presence of relatively large longitudinal solar incidence angles, relatively smaller lateral solar incidence angles, in combination with the articulating energy receiver. The new lens assembly can further be deployed and supported as a thin flexible stretched membrane with tension maintaining the lens in proper position on orbit.

Abstract: A method for manufacturing solar cells is disclosed. The method includes forming an insulating material in a printable suspension along the at least one side edge of a solar cell, the insulating material in a printable suspension further adapted to form a protective film which reduces cracking near at least one side edge of the solar cell and improve structural integrity against mechanical stress. The protective film has an elastic modulus of at least 3 GPa, an elongation break point of at least 13 percent and a glass transition temperature of at least 250 degrees Celsius which provides additional structural support along the side edges, increasing the overall structural integrity, providing electrical insulation along the edges and improve the flexure strength of the solar cell.

Abstract: Disclosed is an organic photoelectric conversion element which has a reverse layer structure wherein at least a first electrode, a photoelectric conversion layer and a second electrode are arranged on a substrate in this order. The organic photoelectric conversion element is characterized in that: the photoelectric conversion layer is a bulk heterojunction layer that is composed of a p-type organic semiconductor material and an n-type organic semiconductor material; and a compound that has a linear or branched fluorinated alkyl group having 6-20 carbon atoms is contained as the p-type organic semiconductor material.

Abstract: An interconnect assembly. The interconnect assembly includes a trace that includes a plurality of electrically conductive portions. The plurality of electrically conductive portions is configured both to collect current from a first solar cell and to interconnect electrically to a second solar cell. In addition, the plurality of electrically conductive portions is configured such that solar-cell efficiency is substantially undiminished in an event that any one of the plurality of electrically conductive portions is conductively impaired.

Abstract: One aspect of the present invention relates to a photovoltaic cell. In one embodiment, the photovoltaic cell includes a first conductive layer, an N-doped semiconductor layer formed on the first conductive layer, a first silicon layer formed on the N-doped semiconductor layer, a nanocrystalline silicon (nc-Si) layer formed on a first silicon layer, a second silicon layer formed on the nc-Si layer, a P-doped semiconductor layer on the second silicon layer, and a second conductive layer formed on the P-doped semiconductor layer, where one of the first silicon layer and the second silicon layer is formed of amorphous silicon, and the other of the first silicon layer and the second silicon layer formed of polycrystalline silicon.

Abstract: One embodiment of the present invention provides a double-sided heterojunction solar cell module. The solar cell includes a frontside glass cover, a backside glass cover situated below the frontside glass cover, and a number of solar cells situated between the frontside glass cover and the backside glass cover. Each solar cell includes a semiconductor multilayer structure situated below the frontside glass cover, including: a frontside electrode grid, a first layer of heavily doped amorphous Si (a-Si) situated below the frontside electrode, a layer of lightly doped crystalline-Si (c-Si) situated below the first layer of heavily doped a-Si, and a layer of heavily doped c-Si situated below the lightly doped c-Si layer. The solar cell also includes a second layer of heavily doped a-Si situated below the multilayer structure; and a backside electrode situated below the second layer of heavily doped a-Si.

Abstract: A photovoltaic device operable to convert light to electricity, comprising a substrate, a plurality of structures essentially perpendicular to the substrate, one or more recesses between the structures, each recess having a planar mirror on a bottom wall thereof. The structures have p-n or p-i-n junctions for converting light into electricity. The planar mirrors function as an electrode and can reflect light incident thereon back to the structures to be converted into electricity.

Abstract: An object is to increase conversion efficiency of a photoelectric conversion device without increase in the manufacturing steps. The photoelectric conversion device includes a first semiconductor layer formed using a single crystal semiconductor having one conductivity type which is formed over a supporting substrate, a buffer layer including a single crystal region and an amorphous region, a second semiconductor layer which includes a single crystal region and an amorphous region and is provided over the butler layer, and a third semiconductor layer having a conductivity type opposite to the one conductivity type, which is provided over the second semiconductor layer. A proportion of the single crystal region is higher than that of the amorphous region on the first semiconductor layer side in the second semiconductor layer, and the proportion of the amorphous region is higher than that of the single crystal region on the third semiconductor layer side.

Abstract: A method for manufacturing a thermoelectrical device includes providing a substrate and also forming at least one deep trench into the substrate. The method further includes forming at least one thermocouple which comprises two conducting paths, wherein a first conducting path comprises a first conductive material and a second conducting path comprises a second conductive material, such that at least the first conducting path is embedded in the deep trench of the substrate.

Abstract: A solar cell includes an integrated structure. The integrated structure includes a first electrode layer, a P-type silicon layer, an N-type silicon layer, and a second electrode layer arranged in the above sequence. At least one curved surface is defined on the integrated structure. The integrated structure includes a P-N junction near an interface between the P-type silicon layer and the N-type silicon layer; and a photoreceptive surface exposing the P-N junction. The photoreceptive surface is one the at least one curved surface of the integrated structure and is configured to receive incident light beams.

Abstract: A solar cell includes an integrated structure and a reflector. The integrated structure includes a first electrode layer, a P-type silicon layer, an N-type silicon layer, and a second electrode layer arranged in the above sequence; a P-N junction near an interface between the P-type silicon layer and the N-type silicon layer; a photoreceptive surface exposing the P-N junction. The photoreceptive surface is on a curved surface of the integrated structure and is configured to receive incident light beams. The reflector is on another side of the integrated structure, opposite to the photoreceptive surface.

Abstract: A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.

Abstract: A system and method of capturing solar energy, and related method of manufacturing, are disclosed. In at least one embodiment, the system includes a first lens array having a plurality of lenses, and a first waveguide component adjacent to the lens array, where the waveguide component receives light, and where the waveguide component includes an array of prism/mirrored facets arranged along at least one surface of the waveguide component. The system further includes at least one photovoltaic cell positioned so as to receive at least a portion of the light that is directed out of the waveguide. A least some of the light passing into the waveguide component is restricted from leaving the waveguide component upon being reflected by at least one of the prism/mirrored facets, hereby the at least some light restricted from leaving the waveguide component is directed by the waveguide toward the at least one photovoltaic cell.

Abstract: A photoelectric conversion device includes a front electrode, a photoelectric conversion layer formed of a semiconductor material, a transparent conductive layer formed of a transparent conductive oxide, a back electrode formed of a metal material, and a conductive layer formed of a semiconductor material primarily of silicon and having a refractive index higher than the transparent conductive layer contactually sandwiched between the transparent conductive layer and the back electrode. The photoelectric conversion device exhibits a high photoelectric conversion efficiency by keeping low the electrical resistance between the semiconductor layer and the back electrode and by increasing reflectance for light having passed though the semiconductor layer.

Abstract: A thermoelectric conversion module includes: a first substrate having water permeability and thermal conductivity; a thermoelectric conversion element provided on the first substrate; a heat insulator having water permeability provided around the thermoelectric conversion element on the first substrate; and a second substrate disposed on the thermoelectric conversion element and the heat insulator and having water permeability and thermal conductivity.

Abstract: A thermoelectric conversion element, a thermoelectric conversion module, and a method for producing a thermoelectric conversion element are provided, each of the element and the module having a low contact resistance between a p-type thermoelectric conversion material and an n-type thermoelectric conversion material and being capable of being used at high temperatures without deterioration due to oxidation. A p-type oxide thermoelectric conversion material is primarily made of a substance having a layered perovskite structure represented by the formula: A2BO4, wherein A includes at least La, and B represents at least one element including at least Cu. An n-type oxide thermoelectric conversion material is primarily made of a substance having a layered perovskite structure represented by the formula: D2EO4, wherein D includes at least one of Pr, Nd, Sm, and Gd, and E represents at least one element including at least Cu.