Patents Examined by Chung Auh Luu
  • GaAs MESFET having LDD and non-uniform P-well doping profiles
    Patent number: 6458640
    Abstract: A MESFET has a conduction channel provided with a first doping profile in a first portion which extends between the source and the gate, and a second doping profile in a second portion which extends between the gate and the drain. A background p-type region is provided beneath the first portion, but not necessarily behind the second portion.
    Type: Grant
    Filed: June 4, 2001
    Date of Patent: October 1, 2002
    Assignee: Anadigics, Inc.
    Inventor: Weiqi Li