Abstract: A semiconductor device including a semiconductor structure defining a mesa having a mesa surface and mesa sidewalls, and first and second passivation layers. The first passivation layer may be on at least portions of the mesa sidewalls, at least a portion of the mesa surface may be free of the first passivation layer, and the first passivation layer may include a first material. The second passivation layer may be on the first passivation layer, at least a portion of the mesa surface may be free of the second passivation layer, and the second passivation layer may include a second material different than the first material.