Patents Examined by Collen E Snow
  • Semiconductor device with backfilled isolation
    Patent number: 7936006
    Abstract: An MOS device has an embedded dielectric structure underlying an active portion of the device, such as a source extension or a drain extension. In an alternative embodiment, an embedded dielectric structure underlies the channel region of a MOS device, as well as the source and drain extensions.
    Type: Grant
    Filed: October 6, 2005
    Date of Patent: May 3, 2011
    Assignee: Xilinx, Inc.
    Inventors: Yuhao Luo, Deepak Kumar Nayak, Daniel Gitlin