Abstract: Method of deposition on a substrate, of a metal containing dielectric film comprising a compound of the formula (I): (M11-aM2a)ObNc,??(I) wherein 0?a<1, 0<b?3, 0?c?1, M1 represents a metal selected from (Hf), (Zr) and (Ti); and M2 represents a metal atom atoms, which comprises the following steps: A step a) of providing a substrate into a reaction chamber; A step (b) of vaporizing a M1 metal containing precursor of the formula (II): (R1yOp)x(R2tCp)zM1R?4-x-z??(II) wherein 0?x?3, preferably x=0 or 1, 0?z?3, preferably z=1 or 2, 1?(x+z)?4, 0?y?7, preferably y=2 0?t?5, preferably t=1, (R1yOp) represents a pentadienyl ligand, which is either unsubstituted or substituted; (R2tCp) represents a cyclopentadienyl (Cp) ligand, which is either unsubstituted or substituted, to form a first gas phase metal source; A step c) of introducing the first gas phase metal source in the reaction chamber, in order to provoke their contact with said substrate, to generate the deposition of a metal containing dielectric

Abstract: Embodiments herein describe a composition including at least one water-soluble complex having a water-soluble separation agent including a planar portion, at least one pi electron on the planar portion and at least one electron withdrawing group; and a semiconducting single-walled carbon nanotube in an aqueous solution. Further embodiments describe a method of separating metallic single-walled carbon nanotubes and semiconducting single-walled carbon nanotubes including providing carbon nanotubes having an admixture of semiconducting single-walled carbon nanotubes and metallic single-walled carbon nanotubes; and combining the admixture with a water-soluble separation agent in an aqueous solution to form a mixture, in which the water-soluble separation agent includes a planar portion, at least one pi electron on the planar portion and at least one electron withdrawing group.

Abstract: The present invention relates to an HPHT method for synthesizing single crystal diamond, wherein a single crystal diamond seed having an aspect ratio of at least 1.5 is utilized. Single crystal diamond seeds having an aspect ratio of at least 1.5 and synthetic single crystal diamond which may be obtained by the method recited are also described. The growth surface is substantially aligned along a <100> or <110> direction in the plane of the growth surface.