Abstract: In one or more embodiments, one or more systems, one or more methods, and/or one or more processes may receive a scaling factor and a retention time power law coefficient associated with a solid state drive (SSD); determine a first raw bit error rate (RBER) value for the SSD at a first time; extrapolate a second time at which a second RBER value for the SSD would reach a maximum RBER value if left unpowered, based at least on the first raw bit error rate value, the scaling factor, and the retention time power law coefficient; and provide the second time at which the second RBER value for the SSD would reach the maximum raw bit error rate value if left unpowered to at least one of an information handling system (IHS), IHS firmware, a baseboard management controller of the IHS, and an application executing on the IHS.

Abstract: In certain aspects, a memory system includes at least one memory device and a memory controller coupled to the at least one memory device. The memory controller may be configured to determine a current power consumption value indicating total concurrent power consumption of executing a plurality of memory operations in parallel. The memory controller may also be configured to determine an addon power consumption value indicating additional power consumption of executing a subsequent memory operation. The memory controller may be further configured to determine whether a summation of the current and the addon power consumption values exceeds a predetermined power consumption threshold. After determining that the summation of the current and the addon power consumption values does not exceed the predetermined power consumption threshold, the memory controller may be configured to execute the subsequent memory operation in parallel with the plurality of memory operations.

Abstract: A storage device includes: protected memory including one or more log pages; non-volatile memory; and a storage controller. The storage controller includes: a command fetcher to receive a data request command associated with data including first metadata and second metadata, and execute the data request command in the non-volatile memory; a logger to identify the second metadata, and log the second metadata in the one or more log pages; and a log page fetcher/eraser to retrieve the second metadata from the one or more log pages in response to a separate command.

Abstract: A data storage device includes a non-volatile memory device having one or more memory dies and each of the memory dies include a plurality of input-output (I/O) lines. The data storage device further includes a controller. The controller is configured to receive an instruction to enter a low-power operating mode. Entering the low-power operating mode includes removing power from the one or more memory dies, providing an output signal toggling between a logic high and a logic low at a predetermined frequency to the plurality of I/O lines for a predetermined period of time, and operating in the low-power operating mode upon the expiration of the predetermined period of time.

Abstract: A memory system includes a memory device including plural memory groups, each memory group including plural non-volatile memory cells; and a controller configured to transmit a command to the memory device so that the memory device performs a data input/output operation within at least one memory group among the plural memory groups, receive a response for the command and a status data regarding the at least one memory group from the memory device, and determine whether the data input/output operation has succeeded or failed based on the response and the status data.

Abstract: A data storage device and method for progressive fading for video surveillance systems are provided. In one embodiment, a data storage device is provided comprising a memory and a controller. The controller is configured to store a plurality of digital video frames in the memory over time; and create free space in the memory by deleting some of the plurality of digital video frames across a plurality of subsets of digital video frames, wherein fewer digital video frames are deleted from a subset stored more recently in time than from a subset stored less recently in time. Other embodiments are provided.

Abstract: Data blocks may be optimized and managed in a mixed mode that utilizes a single-level cell (SLC) mode in combination with higher-density memory modes to promote full block utilization and to increase overall cycles of the data blocks. A data block cycling process in the mixed mode can place a data block in a higher-density memory mode that includes a multi-level cell (MLC) mode, a triple-level cell (TLC) mode, or a quad-level cell (QLC) mode, if the SLC cycle count of the data block is relatively higher as compared to other data blocks. Similarly, in the mixed mode, a data block may be placed in the SLC mode to store parity data or intermediate data if the corresponding TLC cycle count is relatively higher than other data blocks. Data clocks cycles may also be evenly distributed in the mixed mode, thereby balancing the mixed mode usage across all data blocks.

Abstract: Devices and techniques for NAND logical-to-physical table region tracking are described herein. A write request, including a logical page and data to be written at the logical page, is received at a controller of a NAND device. The NAND controller may then establish an entry in a logical-to-physical (L2P) mapping table between the logical page and a physical page of a physical block of the NAND device to which the data is written. Here, the entry may be in a region of the L2P mapping table that is one of multiple regions. An indication of the region may be written in a data structure corresponding to the physical block.

Abstract: A non-volatile storage apparatus includes a plurality of non-volatile memory cells formed on a memory die, each non-volatile memory cell configured to hold a plurality of bits of data, and a control circuit formed on the memory die. The control circuit is configured to calculate parity data for data to be stored in the memory cells and program the memory cells to first distributions. The control circuit is also configured to read memory cells in the first distributions, recover the data from results of reading the memory cells in the first distributions combined with the parity data, and further program the memory cells from the first distributions to second distributions to store the data.

Abstract: According to one embodiment, a memory system includes a nonvolatile memory and a controller. The nonvolatile memory is correspond to a first mode of writing data of N bits per unit area and a second mode of writing data of M bits (M>N) per unit area. When receiving a first command issued prior to a write command to instruct writing write data to the nonvolatile memory, the controller selects one or both of the first mode and the second mode for writing the write data to the nonvolatile memory, to allow writing the write data to the nonvolatile memory to be executed in the first mode as much as possible, based on a capacity of the write data specified by the first command and a capacity of a free area of the nonvolatile memory.

Abstract: A storage device and a data accessing method are disclosed, wherein the storage device includes a memory circuit and a control circuit. The memory circuit includes a plurality of multi-level cells, and each of the multi-level cells is configured to store at least a first bit, a second bit and a third bit in at least a first page, a second page and a third page. The control circuit is configured to read the first bits according to a one-time reading operation related to the first bits, read the second bits according to M-times reading operations related to the second bits, and read the third bits according to N-times reading operations related to the third bits, wherein the difference between M and N is less than or equal to one.

Abstract: A semiconductor storage device includes a non-volatile first memory, a second memory that includes a first area for recording data to be recorded in the first memory and a second area for recording data read from the first memory, and a memory controller that controls the first memory.

Abstract: An access tracker configured to receive a request to access a page, determine whether a page identification (ID) associated with the page is in the access tracker, increment an access count of the page in response to determining the page ID is in the access tracker, sort a number of page IDs based on an access count of each page ID, and determine whether a different page is hot or cold in response to sorting the number of page IDs.

Abstract: A method, apparatus, and device for erasing a Solid State Disk (SSD), and a storage medium are provided. The method includes: receiving, from a Virtual Flash Translation Layer (VFTL) running in a preset virtual environment, an erasing request for erasing a target block; selecting a target spare block from preset spare blocks and feeding back the target spare block to the VFTL; collecting running information of the VFTL within a preset period of time, and determining whether a function of the VFTL is normal according to the running information; and in a case of determining that the function of the VFTL is normal, performing an erasing operation on the target block. The method may fully and comprehensively detect the abnormal condition of the VFTL, and may guarantee the integrity of data information in the solid state disk, thereby improving the reliability of the solid state disk.

Abstract: An information handling system includes a host controller, a memory device, and a processor. The memory device receives I/O commands from the host controller. The memory device includes a processor. The processor sets an initial idle time prior to transition (ITPT) setting as a current ITPT setting for a memory device of an information handling system, and monitors input/output (I/O) commands from a host in the information handling system. While monitoring the I/O commands, the processor increases a first counter in response to the memory device entering a non-operational mode based on the current ITPT setting, and increases a second counter in response to the memory device entering an operational mode within a particular amount of time from when the memory device entered the non-operational mode. The processor further varies the current ITPT setting based on a current ratio of the second counter to the first counter.

Abstract: A processing device in a memory system identifies a first set of bits associated with a translation unit of a memory device, wherein the first set of bits correspond to a page field. The processing device identifies a second set of bits associated with the translation unit of the memory device, wherein the second set of bits corresponds to a block field. The processing device determines that a value representing a page number stored in the page field satisfies a threshold criterion. Responsive to determining that the value representing the page number satisfies the threshold criterion, the processing device determines a difference between the value representing the page number and a threshold value associated with the threshold criterion plurality of block stripes on a memory device. The processing device stores a value representing the difference as a plurality of bits of the second set of bits.

Abstract: A memory system includes a memory device, a system memory, and a controller. The memory device includes a page storing a first chunk including first user data and first meta data and a second chunk including second user data and second meta data. The system memory stores an address map table for a physical address of the page in which the first chunk and the second chunk are stored and a logical address mapped to the physical address. The controller is configured to perform a read operation of the page by recovering the first meta data using the physical address of the first chunk and the address map table, and outputting the second user data using the second meta data of the second chunk on which an error correction operation has passed, when an error correction operation on the first chunk has failed.

Abstract: Methods, systems, and devices for address obfuscation for memory are described. A mapping function may map a logical address of data to a physical address of a memory cell. The mapping function may be implemented with a mapping component that includes mapping subcomponents. Each mapping subcomponent may be independently configurable to implement a logic function for determining a bit of the physical address. The mapping function may vary across memory devices or aspects of memory device, and in some cases may vary over time.

Abstract: A memory device, a memory system, and/or a method of operating a memory system includes measuring, using processing circuitry, an erase program interval (EPI) of a memory group included in a non-volatile memory (NVM), the EPI being a time period from an erase time point to a program time point of the memory group, determining, using the processing circuitry, a plurality of program modes based on a number of data bits stored in each memory cell of the memory group, selecting, using the processing circuitry, a program mode for the memory group from the plurality of program modes, based on the measured EPI of the memory group, and performing, using the processing circuitry, a program operation on the memory group corresponding to the selected program mode.

Abstract: Methods, systems, and devices for security techniques for low power state of memory device are described. A host device may initiate a low power state of a memory device. The host device may store a first value of a counter associated with the memory device operating in the low power state and transmit a command to the memory device to enter the low power state. The memory device may increment the counter based on receiving the command and increment the counter to a second value. The host device may validate the memory device based on a difference between the first value of the counter stored by the host device and the second value of the counter.