Patents Examined by D. C.
  • Patent number: 9530857
    Abstract: A semiconductor substrate comprises both vertical interconnects and vertical capacitors with a common dielectric layer. The substrate can be suitably combined with further devices to form an assembly. The substrate can be made in etching treatments including a first step on the one side, and then a second step on the other side of the substrate.
    Type: Grant
    Filed: June 11, 2004
    Date of Patent: December 27, 2016
    Assignee: Tessera Advanced Technologies, Inc.
    Inventors: Freddy Roozeboom, Adrianus Alphonsus Jozef Buijsman, Patrice Gamand, Antonius Lucien Adrianus Maria Kemmeren, Gerardus Tarcisius Maria Hubert