Abstract: A semiconductor substrate comprises both vertical interconnects and vertical capacitors with a common dielectric layer. The substrate can be suitably combined with further devices to form an assembly. The substrate can be made in etching treatments including a first step on the one side, and then a second step on the other side of the substrate.
Type:
Grant
Filed:
June 11, 2004
Date of Patent:
December 27, 2016
Assignee:
Tessera Advanced Technologies, Inc.
Inventors:
Freddy Roozeboom, Adrianus Alphonsus Jozef Buijsman, Patrice Gamand, Antonius Lucien Adrianus Maria Kemmeren, Gerardus Tarcisius Maria Hubert