Patents Examined by D. Graybill
  • Trench gate structure with thick bottom oxide
    Patent number: 4992390
    Abstract: Improved trench gate field effect devices are provided by forming a thick oxide at the bottom of the trench. This thick oxide may be preferably formed by ion implantation into the bottom of the trench.
    Type: Grant
    Filed: July 6, 1989
    Date of Patent: February 12, 1991
    Assignee: General Electric Company
    Inventor: Hsueh-Rong Chang