Patents Examined by D. M. Ostronski
  • Patent number: 4994903
    Abstract: A circuit having a semiconductor device therein has a novel and improved circuit substrate comprising a layer of organic electrically insulating material having a layer of metal of relatively high electrical conductivity adhered to and supported on one side of the organic material layer forming electrically conductive circuit paths and forming a pad mounting the semiconductor device. A heat sink metal layer is adhered to and supported on an opposite side of the organic material layer for withdrawing heat from the semiconductor device.
    Type: Grant
    Filed: December 18, 1989
    Date of Patent: February 19, 1991
    Assignee: Texas Instruments Incorporated
    Inventors: Thomas Wroe, Henry F. Breit