Abstract: The present invention discloses a method for forming a self-aligned contact. In the present invention, a amorphous SiC layer or a HexaChloroDisilane-SiN (HCD-SiN) layer is formed on the surface of a transistor as an etching stopper layer. After removing part of the etching stopper layer, a gate protection film is formed on the surface of the gate electrode of a transistor. Due to the high etching selectivity of the gate protection film to the dielectric layer, the gate protection film effectively prevents the gate electrode of a transistor from being etched in the contact-etching process. In addition, the gate protection film has a low dielectric constant thereby reducing the parasitic capacitance of a bit line formed by the self-aligned contact forming method according to the present invention.