Abstract: Discussed herein are methods of orienting one-dimensional and two-dimensional materials via the application of stationary and rotating magnetic fields. The oriented one-dimensional and two-dimensional materials may exhibit macroscopic properties, and may be employed in various measurement devices as well as thermal and electrical shielding applications or battery devices. A single 1D or 2D material may be suspended in another material such as dionized water, polymer(s), or other materials during the orientation, and the suspension may remain as a liquid or may be solidified or partially solidified to secure the oriented material(s) into place. The 1D and 2D materials that respond to the magnetic orientation may further cause other elements of the suspension to be oriented in a similar manner.

Abstract: A method of preparing a soft carbon material for high-voltage supercapacitors includes: providing an initial soft carbon material characterized by: (A) a first carbon layer spacing greater than 0.345 nm but less than 0.360 nm; (B) a crystal plane (002) with a length (Lc) less than 6 nm; (C) a crystal plane (101) with a length (La) less than 6 nm; and (D) an intensity ratio (I(002)/I(101)) of the crystal plane (002) to the crystal plane (101) obtained by XRD analysis being less than 60; performing an alkaline activation on the initial soft carbon material with an alkaline activator to obtain a first processing carbon material; and performing an electrochemical activation on the first processing carbon material with an electrolyte to obtain the soft carbon material for the high-voltage supercapacitors.

Abstract: A membrane is electrically charged to a polarity. A surface of carbon nanotubes (CNTs) in a solution is caused to acquire a charge of the polarity. The solution is filtered through the membrane. An electromagnetic repulsion between the membrane of the polarity and the CNTs of the polarity causes the CNTs to spontaneously align to form a crystalline structure.

Abstract: The present disclosure relates to novel particulate composite materials comprising a graphitic core particle associated with SiOx nanoparticles (0.2?X?1.8), and coated by a layer of non-graphitic carbon, e.g., pyrolytic carbon deposited by chemical vapor deposition (CVD). Also included are processes for making such particles as well as uses and downstream products for the novel composite material, in particular as an active material in negative electrodes in Li-ion batteries.

Abstract: In a method for making a flexible material, a sheet of graphene oxide-composite paper is subjected to an environment having a relative humidity above a predetermined threshold for a predetermined amount of time. At least one expansion cut is cut in the sheet of graphene oxide-composite paper. A flexible conductive material includes a sheet of graphene oxide-composite paper defining at least one cut passing therethrough and formed it a kirigami structure. A region of the sheet of graphene oxide-composite paper includes reduced graphene oxide.

Abstract: Provided is a high heat radiation thin film. The high heat radiation thin film may comprise a metal substrate, and a carbon layer which is disposed on the metal substrate and is thicker than 2.5 nm and thinner than 10 nm.

Abstract: A method for manufacturing a carbon-doped silicon single crystal wafer, including steps of: preparing a silicon single crystal wafer not doped with carbon; performing a first RTA treatment on the silicon single crystal wafer in an atmosphere containing compound gas; performing a second RTA treatment at a higher temperature than the first RTA treatment; cooling the silicon single crystal wafer after the second RTA treatment; and performing a third RTA treatment. The crystal wafer is modified to a carbon-doped silicon single crystal wafer, sequentially from a surface thereof: a 3C-SiC single crystal layer; a carbon precipitation layer; a diffusion layer of interstitial carbon and silicon; and a diffusion layer of vacancy and carbon. A carbon-doped silicon single crystal wafer having a surface layer with high carbon concentration and uniform carbon concentration distribution to enable wafer strength enhancement; and a method for manufacturing the carbon-doped silicon single crystal wafer.

Abstract: The present invention provides: a graphite sheet polyimide film, which is derived from a first precursor composition comprising a first polyamic acid and comprises a sublimable inorganic filler and a spherical polyimide-based filler; a manufacturing method therefor; and a graphite sheet manufactured using the same.

Abstract: Disclosed herein are methods for forming a graphene film on a substrate, the methods comprising depositing graphene on a surface of the substrate by a first vapor deposition step to form a discontinuous graphene crystal layer; depositing a graphene oxide layer on the discontinuous graphene crystal layer to form a composite layer; and depositing graphene on the composite layer by a second vapor deposition step, wherein the graphene oxide layer is substantially reduced to a graphene layer during the second vapor deposition step. Transparent coated substrates comprising such graphene films are also disclosed herein, wherein the graphene films have a resistance of less than about 10 K?/sq.

Abstract: A super-flexible high thermal conductive graphene film and a preparation method thereof are provided. The graphene film is obtained from ultra large homogeneous graphene sheets through processes of solution film-forming, chemical reduction, high temperature reduction, high pressure suppression and so on. The graphene film has a density in a range of 1.93 to 2.11 g/cm3, is formed by overlapping planar oriented graphene sheets with an average size of more than 100 ?m with each other through ?-? conjugate action, and comprises 1 to 4 layers of graphene sheets which have few defects. The graphene film can be repeatedly bent for 1200 times or more, with elongation at break of 12-18%, electric conductivity of 8000-10600 S/cm, thermal conductivity of 1800-2600 W/mK, and can be used as a highly flexible thermal conductive device.

Abstract: Methods for forming a graphene film on a silicon carbide material are provided, along with the resulting coated materials. The method can include: heating the silicon carbide material to a growth temperature (e.g., about 1,000° C. to about 2,200° C.), and exposing the silicon carbide material to a growth atmosphere comprising a halogen species. The halogen species reacts with the silicon carbide material to remove silicon therefrom. The halogen species can comprise fluorine (e.g., SiF4, etc.), chlorine (e.g., SiCl4), or a mixture thereof.

Abstract: Functionally graded graphene materials, methods of making and uses thereof are described.

Abstract: The present invention relates to a method of reproducing at least one single-walled carbon nanotube (3) having predefined electronic properties or a plurality of single-walled carbon nanotube (3) having the same electronic properties. A dispersion (2) is produced for this purpose and carbon nanotubes (3) contained in the dispersion are processed into fragments (6) by energy input. These fragments (6) are applied to and oriented on a carrier (7). The fragments (6) are subsequently extended by chemical vapor deposition and the originally present carbon nanotubes (3) are thus reproduced.

Abstract: Disclosed is a method of producing surface-treated carbon nanostructures which comprises: a depressurization step wherein a carbon nanostructure-containing liquid which comprises carbon nanostructures and a dispersion medium is depressurized; and a surface treatment step wherein an oxidizing agent is added in the carbon nanostructure-containing liquid after or during the depressurization step so that the carbon nanostructures have a surface oxygen atom concentration of 7.0 at % or more. The carbon nanostructures preferably comprise carbon nanotubes.

Abstract: A method of producing Stress Activated Pyrolytic Carbon-Carbon NanoTube (SAPC-CNT) fibers is disclosed. The fibers are a composite consisting of a tubular core of pristine graphite planes that include carbon nanotubes (CNTs) surrounded by semi-graphitic carbon material that includes Stress Activated Pyrolytic Carbon (SAPC), the SAPC being characterized by wavy graphite planes ranging from 0.1 nm to 1 nm and oriented parallel to the axis of each fiber, the semi-graphitic carbon material also being characterized by an inclusion of 4 to 10 atomic percent of nitrogen heteroatoms, the nitrogen heteroatoms including an above 60% of quaternary and pyridinic nitrogen groups.

Abstract: A porous carbon that has an extremely high specific surface area while being crystalline, and a method of manufacturing the porous carbon are provided. A porous carbon has mesopores 4 and a carbonaceous wall 3 constituting an outer wall of the mesopores 4, wherein the carbonaceous wall 3 has a portion forming a layered structure. The porous carbon is fabricated by mixing a polyamic acid resin 1 as a carbon precursor with magnesium oxide 2 as template particles; heat-treating the mixture in a nitrogen atmosphere at 1000° C. for 1 hour to cause the polyamic acid resin to undergo heat decomposition; washing the resultant sample with a sulfuric acid solution at a concentration of 1 mol/L to dissolve MgO away; and heat-treating the noncrystalline porous carbon in a nitrogen atmosphere at 2500° C.

Abstract: A process for producing a hydrogen storage means. Separate layers comprising a hydrogen-storing material and a heat-conducting material are introduced into a press mold. The separate layers of the hydrogen-storing material and the heat-conducting material are compressed together to generate a sandwich structure. The heat-conducting material, on use of the sandwich structure as hydrogen storage means, assumes the task of conducting heat.

Abstract: A method for graphene functionalization that preserves electronic properties and enables nanoparticles deposition comprising providing graphene, functionalizing the graphene via non-covalent or covalent functionalization, rinsing the graphene, drying the graphene, and forming functionalized graphene wherein the functionalized graphene preserves electronic properties and enables nanoparticles deposition. A functionalized graphene wherein the graphene functionalization preserves electronic properties and enables nanoparticles deposition.

Abstract: A method of growing graphene includes forming a carbon monolayer on a substrate by injecting a first reaction gas into a reaction chamber, wherein the first reaction gas includes a first source including a component that is a carbon source and belongs to an electron withdrawing group, and injecting a second reaction gas including a second source into the reaction chamber, wherein the second source includes a functional group that forms a volatile structure by reacting with a component that belongs to an electron withdrawing group. Graphene may be directly grown on a surface of the substrate by repeatedly injecting the first reaction gas and the second reaction gas.

Abstract: The present invention provides a graphene structure having graphene bubbles and a preparation method for the same. The preparation method comprises: providing a substrate; forming a hydrogen terminated layer on a top surface of the substrate and a graphene layer disposed on a top surface of the hydrogen terminated layer; and placing a probe on the graphene layer and applying a preset voltage to the probe, to excite a part of the hydrogen terminated layer at a position corresponding to the probe to convert into hydrogen, the hydrogen causing the graphene layer at a position corresponding to the hydrogen to bulge, so as to form a graphene bubble enveloping the hydrogen.