Patents Examined by Daniel Mae
  • Method of making a semiconductor component with compensation implantation
    Patent number: 5981342
    Abstract: A semiconductor component, in particular an EEPROM, and a production method therefor, avoid an avalanche breakdown from a buried channel to a substrate through the use of a special lateral dopant profile in the buried channel, in which a peripheral zone of the buried channel has a higher effective doping than a region located below a tunnel window. The lateral dopant profile is produced through the use of a compensation implantation with dopant atoms of the conduction type opposite that of the buried channel.
    Type: Grant
    Filed: May 19, 1997
    Date of Patent: November 9, 1999
    Assignee: Siemens Aktiengesellschaft
    Inventors: Ronald Kakoschke, Holger Sedlak