Patents Examined by Davi Vu
  • Patent number: 10615282
    Abstract: The present disclosure provides a method for manufacturing a thin-film transistor and a thin-film transistor manufactured thereby, an array substrate and a display apparatus. The method comprises: forming a first layer; forming at least one etch stopper over the first layer; forming a second layer over the first layer and the at least one etch stopper; forming at least one contact via in the second layer, such that a bottom opening of each contact via contacts with a top surface of one etch stopper; and forming at least one electrode in the at least one contact via, such that each electrode extends in one contact via respectively, and is in contact with, and electrically coupled with, the one etch stopper. The at least one etch stopper comprises a composition.
    Type: Grant
    Filed: November 25, 2016
    Date of Patent: April 7, 2020
    Assignee: BOE TECHNOLOGY GROUP CO., LTD.
    Inventors: Huijuan Zhang, Chienhung Liu