Abstract: A structure and method for manufacturing semiconductor devices by the master slice method, in which various kinds of semiconductor devices are manufactured through utilization of a common master pattern and a plurality of different kinds of selective wiring patterns. A number of bipolar transistors each having plural emitter regions, is formed in a predetermined region, or portion, of a semiconductor substrate by employing a common master pattern, and the plural emitter regions of the respective bipolar transistors are selectively connected by the associated wiring patterns of each thereof to form corresponding bipolar transistors of different, predetermined D.C. characteristics. When manufacturing many different kinds of semiconductor devices by the master slice method, the area which would be wasted on the semiconductor substrate by prior art techniques is greatly reduced, thus providing for enhanced area efficiency.

Abstract: Hot-dip galvanized steel sheet, wherein said coating layer is characterized by being highly resistant to flaking either in a high-temperature humid atmosphere or in long-term indoor aging. The coating comprises 0.1 to less than 0.2 wt % Al, 0.1-0.5 wt % Sb, the remainder being Zn and unavoidable impurities, the total of the unavoidable impurities other than Fe, namely Pb, Cd and Sn being less than 0.02 wt %, the ratio of Sb/Pb being 10-250, and the Al present in the coating layer being in the form of an Al-Sb eutectic.

Abstract: There is provided a gold free alloy for firing on ceramic compositions, especially for dental purposes consisting essentially of 1-70 weight % palladium, 0.1-35 weight % chromium, and the balance consisting essentially of cobalt. There can also be present up to 1 weight % boron, up to 20 weight % molybdenum and/or tungsten, up to 8 weight % scandium, yttrium, lanthanum and/or the rare earths and up to 5 weight % aluminum, silicon, tin, indium and/or gallium.

Abstract: A method of fabricating an array of high capacity memory cells comprises patterning a semiconductor surface to form memory cell areas; covering the memory cell areas with insulator; forming an ion layer of first conductivity type throughout the insulator; forming an ion layer of second conductivity type throughout the semiconductor surface; forming a first conductive pattern over the insulating layer to form a storage gate and to define a storage region extending to an isolation region and to define a transfer region spaced from the isolation region by the storage region; removing ions of first conductivity type from the portion of insulator above the transfer region and from other active areas; removing ions of second conductivity type from the transfer region and other active areas; diffusing ions of first conductivity type from the insulating layer to the storage region to produce in the storage region a shallow ion layer of first conductivity type and a deep ion layer of second conductivity type; and form

Abstract: A silver-based alloy incorporating palladium, magnesium and aluminium in the following proportions of the components, percent by weight:______________________________________ palladium 5 to 30 magnesium 0.1 to 0.5 aluminium 0.01 to 0.5 silver the balance. ______________________________________The alloy of the above-specified composition, in contrast to the known silver-based alloys, possesses a sufficiently high plasticity (relative elongation of the alloy after the internal oxidation thereof is as high as 25%), while retaining a high level of mechanical strength, elasticity, electro-contact and corrosion-resistance properties.

Abstract: Disclosed is a brazing filler metal composition comprising, by weight, about 3.0% to 4.0% chromium, about 1.0%-2.0% boron; about 2.0%-2.5% silicon; about 1.0%-2.0% iron; about 5.0%-6.0% phosphorus; a maximum of about 0.06% carbon and the remainder nickel. Further disclosed is a vacuum brazing process utilizing said filler metal composition.

Abstract: Metal is melted in melting vessels heated in a melting furnace by combustion of fuel and by exhaust gases from the combustion. In order to prevent evaporation, overheating and contamination of the melt, the exhaust gases of the melting furnace, including unburned fuel components of the exhaust gases, are directed through a channel of limited cross-sectional size into a melting chamber of substantially larger cross-sectional size. The hot gases are directed against the surface of melting vessels in the furnace and are allowed to expand in the melting chamber to transfer heat to melting vessels there. In addition, the hot gases are retained and the unburned components are burned in the melting chamber so that their heat capacity is given off to objects within the melting chamber to be stored in those objects to achieve a high degree of utilization of the fuel.

Abstract: A gas detecting element including a semiconductor wafer formed of a transition-metal oxide with an electrode layer bonded to both sides of the wafer and a protective layer overlaid on the surface of the electrode layer. A metal lead wire is attached to each electrode layer by means of an electrically conductive adhesive wherein the region at which the metal lead wire is bonded to the electrode layer is reinforced by an insulating adhesive that covers the region. A process for producing such a gas detecting element is also disclosed.

Abstract: There is presented an electrical contact material consisting of an alloy of gold and a compound selected from a group consisting of a carbide, a boride, or a silicide of a refractory element. The compound of the refractory element is selected from a group consisting of WC, Hfb.sub.2, TiB.sub.2, ZrB.sub.2, WSi.sub.2, and TiSi.sub.2. The resulting alloys have a hexagonal crystal structure and exhibit high wear resistance, low contact resistance, low electrical noise, and a homogeneous uncontaminated microstructure.

Abstract: A blast furnace trough and liner for transferring molten metal from a blast furnace or the like to a hot metal runner or the like comprises a metal trough with an expendable one-piece prefabricated liner therein, the liner being formed of refractory based materials in several layers of different densities coalesced by physical force.

Abstract: Silver base casting alloys for dental use which have a yellow color. They are useful for the manufacture of crowns, bridges and other dental prosthesis and such dental prosthesis are within the scope of the invention. The dental alloys consist essentially of 40-60% silver, 15-20% indium, 8-15% copper, 0.1-2% nickel, 0.1-2% zinc, from 0-10% gold and/or from 0-30% palladium. The total of gold and palladium content is between 10 and 30%.

Abstract: A crucible for containing molten magnesium, and a process for forming the crucible. The crucible is formed from ferritic stainless steel, and particularly type 444 stainless steel plate. The method involves forming ferritic stainless steel plate into component parts of the crucible, while maintaining the ferritic stainless steel plate at temperatures above about 200.degree. F. but below the "blue brittle" temperature range. Further, the method involves special techniques for welding the crucible parts. Specifically, the crucible parts are preheated to a temperature of 100.degree.-150.degree. C. and are completely welded by a process utilizing multiple welding passes with a special metal inert gas shielded welding technique before any cool down of the crucible parts below 100.degree. C. is allowed. The welds extend completely through the crucible walls, which are the thickness of steel plate, and completely incorporate the crucible parts while being essentially free of cracks.

Abstract: An improved method of providing a semiconductor device having a semiconductor substrate containing solid state signal processing circuitry. The solid state signal processing circuitry comprises doped regions of predetermined resistivity within the semiconductor substrate. A passivation layer covers a surface of the semiconductor substrate with electrical contacts to the solid state signal processing circuitry exposed through the passivation layer. The improvement comprises forming, on the electrical contacts, contact pads which have an upper surface devoid of a depressed center region. After the forming step, an adhering insulator material is deposited over the passivation layer, and a semiconductor wafer is mounted onto the substrate above the contact pads to form an assembly.

Abstract: A device for blowing gas under pressure into a bath of liquid metal comprises a mass of refractory material which is porous at least at an inner portion thereof and placed into a metallic container constituted by an outer metallic envelope closed at one of the ends thereof by a bottom member through a central portion of which a conduit extends for feeding a gas under pressure to the porous inner portion of the mass. A deflector is provided fluid-tightly connected to the bottom inwardly of the envelope in which the wall of the deflector extends parallel to that of the envelope but short of the length of the latter. This permits, on the one hand, to avoid penetration of liquid metal between the envelope and the mass of refractory material to a point where it would block the gas feeding conduit and, on the other hand, to canalize the gas through the porous portion of the mass. The present invention relates likewise to a method of making the above device.

Abstract: Molten metal, such as aluminum, is held within rigid refractory lining means beneath, above and alongside the metal while heaters keep the outside of the lining means at a predetermined temperature desired for the metal, the heaters being surrounded by thermal insulation and the whole being surrounded by a fluid-cooled support. An unusually effective embodiment is pipe, with a tubular refractory liner to carry flowing metal, surrounded by sheathed heating elements controlled to keep the exterior of the tube at least at about the predetermined temperature, with the thermal insulation wrapped around the heaters and the enclosing support being a water-jacketed steel pipe. The operation is essentially adiabatic with respect to the refractory liner, delivering the molten metal essentially at its original temperature, with unusual saving of heat energy. When the heated pipeline has been drained, only easily removed, paper-thin skulls of solid metal remain.

Abstract: An electrode operating device for tapping an electric furnace provides remotely controllable motion of an electrode enabling the electrode to melt a fusible plug in the tap-hole of the furnace of an appropriate diameter to permit draining of material contained in the furnace.

Abstract: An improved gate injected, floating gate memory device is described having improved charge retention and endurance characteristics is described in which the barrier height for the injection of charge (electrons or holes) into the floating gate is reduced. This is accomplished by utilizing a layer of semi-insulating polycrystalline silicon between the control electrode and the insulating layer over the floating gate.

Abstract: A teapot ladle has an interior lining of low thermal capacity, low thermal conductivity refractory material which in contact with molten metal poured into the ladle forms an erosion resistant surface, and means for retaining the lining in place when the ladle is tilted.The lining material comprises inorganic fibrous material, particulate refractory material and an organic binder and the retaining means may be a refractory or metal ring which clips over the outer wall of the ladle and the inner wall of the lining, a series of clips or a rod shaped to fit over the top of the ladle and hold the lining in one place at one point on its perimeter.