Abstract: A mass spectrometer for analysis of a sample 5. A laser 1 is provided to illuminate at least part of the surface of the sample 5. Laser light is conducted via an optical fiber 2 and a zoom optical system 3 to the sample. A variable ion optical system 9,10,11 is provided to extract and focus ions released from the sample 5 onto a detector 12. The optical and ion optical systems operate continuously and synchronously to vary the fields of laser illumination and view of the sample such that they are substantially confocal and equal in diameter on the surface of the sample. The sample may be a MALDI sample.

Abstract: Disclosed is a fully automated system capable of producing high quality real-time S-parameter images. It is a useful and versatile tool in Material Science and Solid State Technology for determining the location of subsurface defect types and concentrations in bulk-materials as well as thin-films. The system is also useful in locating top surface metallizations and structures in solid state devices. This imaging system operates by scanning the sample surface with either a small positron source (22Na) or a focused positron beam. The system also possesses another two major parts, namely electronic instrumentation and stand-alone imaging software. In the system, the processing time and use of system resources are constantly monitored and optimized for producing high resolution S-parameter image of the sample in real time with a general purpose personal computer.

Abstract: A low iron soda glass is combined with a UVA phosphor to provide increased uvb transmission from a florescent lamp which may be used as a tanning lamp.

Abstract: A system and method is disclosed for obtaining information regarding one or more contact and/or via holes on a semiconductor wafer. In one embodiment, the method obtains information regarding one or more holes (for example, via or contact) that are disposed in a semiconductor wafer or disposed in a layer which is disposed on or above the semiconductor wafer. The method of this embodiment comprises irradiating the one or more holes with an electron beam; and determining information relating to a bottom diameter or a bottom circumference of the one or more holes using data which is representative of an amount of substrate current which is generated in response to irradiating the one or more holes with an electron beam.

Abstract: A width-measurement method of reducing or eliminating an error in measurement of a width of an object on a sample resulting from the dimension of the beam diameter, wherein a width-measured value of the object to be width-measured which has been obtained on the basis of a secondary signal obtained from secondary particles emitted from the sample having thereon the object to be width-measured is corrected with a value with respect to a dimension value of a beam diameter.

Abstract: Disclosed is an electron beam apparatus, in which a plurality of electron beams is formed from electrons emitted from an electron gun 21 and used to irradiate a sample surface via an objective lens 28, said apparatus comprising: a beam separator 27 for separating a secondary electron beams emanating from respective scanned regions on the sample from the primary electron beams; a magnifying electron lens 31 for extending a beam space between adjacent beams in the separated plurality of secondary electron beams; a fiber optical plate 32 for converting the magnified plurality of secondary electron beams to optical signals by a scintillator and for transmitting the signals; a photoelectric conversion device 35 for converting the optical signal to an electric signal; an optical zoom lens 33 for focusing the optical signal from the scintillator into an image on the photoelectric conversion device; and a rotation mechanism 36 for rotating the photoelectric conversion device 35 around the optical axis.

Abstract: The invention relates generally to ion mobility based systems, methods and devices for analyzing samples and, more particularly, to sample detection using enhanced condition control and data interpretation.

Abstract: A charged particle beam adjustment apparatus for tilting an electron beam by a tilt deflector is disclosed. The tilt angle adjustment of the electron beam and the distortion adjustment for correcting the image distortion generated when the electron beam is tilted are conducted on a specified. sample such as a pyramidal sample. The images before and after the tilting are acquired and processed to determine the tilt angle value and the distortion amount. The tilt angle adjustment and the adjustment for correction of the distortion are automated in accordance with a predetermined processing flow.

Abstract: A combination electrospray/microwave induced plasma (MIP) ionization source is used as the ionization source for a mass spectrometer. The electrospray can be operated in positive mode, negative mode, or it can be switched off. The microwave-induced plasma can also be switched on or off. This allows the instrument to be operated in multiple modes. With the electrospray off and the MIP on, the instrument will normally have its maximum elemental sensitivity. Mixed mode operation potentially allows the determination of additional information about the chemical constituents present in the analyte. In pure electrospray mode, it is possible to obtain molecular information and to analyze organic compounds.

Abstract: A lithographic projection apparatus includes a beam path for a beam of radiation, a projection system, a support structure for supporting a patterning device and a substrate holder for holding a substrate. The beam path includes a radiation system for providing the beam of radiation, and the projection system projects the beam of radiation patterned by the patterning device onto a target portion on the substrate. At least one chamber that includes at least part of the beam path. A purge gas supply subsystem is coupled to the chamber for supplying a flow of purge gas to the chamber, and a control unit is arranged to switch the purge gas supply subsystem between at least two different modes of operation. The control unit controls the purge gas supply subsystem to supply mutually different respective non-zero flow rates of the purge gas to the chamber in the different modes of operation.

Abstract: A processing probe for repairing a defective portion in a sample has a cantilever and a probe separate and independent from the cantilever and integrally connected to an end portion of the cantilever for scratch-processing a defective portion of a sample. The cantilever and the probe are conductive for preventing the generation of electrostatic charges by friction of the probe against the sample during scratch-processing of the defective portion of the sample.

Abstract: The ion implanting method uses both reciprocatively scanning an ion beam in an X direction and reciprocatively mechanically driving a substrate in a Y direction orthogonal thereto. An implanting step of implanting ions separately for two implanted regions with different dose amounts of the substrate is executed plural times by changing at the center of the substrate a driving speed of the substrate. A rotating step of rotating the substrate around its center by a prescribed angle is executed once during each of the intervals between the respective implanting steps and while the ion beam is not applied to the substrate.

Abstract: A method and device to accurately obtain very small quantity of wear of the order of nanometers of a protective film on the surface of a sliding member. A quantity of wear on the surface of a measurement sample including a base and a coating layer is measured by making a spectrum of the surface elements in a reference sample using a surface-element analysis device which analyzes elements on the surface of a substance from an energy spectrum of charged particles obtained by applying excited ionization radiation on the reference sample equivalent to the measurement and by measuring charged particles generated from the surface of the substance. A step of obtaining signal intensity ratios of plural elements from the spectrum is repeated a plurality of times while the surface of the reference sample is being etched and calibration curves which indicate a distribution of the signal intensity ratios of the plural elements in the reference sample are made.

Abstract: In a scanning electron microscope, slimming is reduced by reducing a frame count. As the frame count is reduced, the amount of detected secondary electrons decreases, so that a probe current amount is increased to emit an increased amount of detected secondary electrons. A primary electron beam is scanned on a sample, a histogram is created, and the histogram is second-order differentiated to calculate a level of halftone at which a sample image changes in contrast, and to calculate the probe current amount. By adjusting the frame count suitable for the calculated probe current amount, and the contrast suitable for the sample image, the slimming of the sample is limited, and a highly visible sample image is generated for length measurement.

Abstract: An illumination system for an extreme ultraviolet (EUV) lithography system may include multiple sources of EUV light. The system may combine the light from the multiple sources when illuminating a mask.

Abstract: A method of separating ions is disclosed. The method includes a step of providing a FAIMS analyzer region for separating ions, the FAIMS analyzer region including at least one region of segmentation. The segmentation permits ion trapping, and a combination trapping and gating that permits high efficiency of ions collection from continuous ion sources. The ions are separated in segmented FAIMS, according to their high-field mobility properties, and by using the method described herein according to their low-field mobility. The ions are separated by low field mobility using stationary potential gradients formed by voltages applied to the segments, and by traveling potential gradients of various shapes. The ions are separated along the longitudinal direction in cylindrical FAIMS, and may be detected in a time-of-arrival fashion as the ions leave the ion outlet of FAIMS or optionally the ions other than selected are caused to collide with the electrodes and only the selected ions transmitted.

Abstract: A fluorescent trace material is provided within at least a portion of an electrical contact or interrupter assembly component, or a cavity defined therein. At least a portion of the fluorescent trace material is exposed or released from the electrical contact or interrupter assembly component, indicating a degree of component wear.

Abstract: A method of junction delineation of non-epitaxial wafers comprises the steps of preparing a sample of the wafer, staining the sample using a mixture of between one and three parts hydrofluoric acid to fifty parts nitric acid to twenty parts water, and scanning the sample with a scanning electron microscope.

Abstract: The invention provides a charged particle therapy system capable of increasing the number of patients treated. An irradiation filed forming apparatus for irradiating a charged particle beam extracted from a charged particle beam generator to an irradiation target includes an RMW device. The RMW device comprises a housing and an RMW disposed within the housing. A rotary shaft of the RMW is rotatably mounted to the housing. The RMW device is detachably installed in an RMW holding member providied in a casing of the irradiation filed forming apparatus. The housing can be placed in contact with the RMW holding member, and hence positioning of the rotary shaft of the RMW to a predetermined position can be performed in a short time. This contributed to cutting a time required for treatment per patient and increasing the number of patients treated.

Abstract: In various embodiments, provided are ion optics systems comprising an even number of ion mirrors arranged in pairs such that a trajectory of an ion exiting the ion optics system can be provided that intersects a surface substantially parallel to an image focal surface of the ion optics system at a position that is substantially independent of the kinetic energy the ion had on entering the ion optics system. In various embodiments, provided are ion optics systems comprising an even number of ion mirrors arranged in pairs where the first member and second member of each pair are disposed on opposite sides of a first plane such that the first member of the pair has a position that is substantially mirror-symmetric about the first plane relative to the position of the second member of the pair.