Abstract: A wafer of the semiconducting compound ZnTe is subjected to at least one bombardment by a magnesium ion flux, the energy and density of the bombardment or bombardments being such as to obtain a desired concentration of magnesium ions in the portion of the semiconductor to be doped and this is followed by a thermal annealing operation, the concentration of magnesium being such as to obtain an alloy having the formula Mg.sub.X Zn.sub.1.sub.-X Te with 0<X<1.
Type:
Grant
Filed:
September 11, 1974
Date of Patent:
May 25, 1976
Assignees:
Commissariat a l'Energie Atomique, Agence Nationale de Valorisation de la Recherche (ANVAR), Agence Nationale de Valorisation de la Recherche Anvar