Abstract: There is disclosed a method for automatically checking position data of J-leads at a semiconductor component enclosed in a housing with respect to a plane parallel to the bottom side of the housing. The bottom side of the housing is illuminated by light from an illuminator at at least one reproducible angle. The light reflected from the bottom side of the housing and the leads at essentially right angles is picked up by a camera with high resolution. The image signals of the camera are fed to an image signal processing device, and at least one data record with an indicator assigned to the semiconductor component is stored. From the image signals, position data of the leads are determined. Any deviation of the position data from predetermined nominal values is determined by comparing the position data with reference data.

Abstract: A method for forming a semiconductor device includes forming a conductive bump on one or more of pads of a semiconductor substrate. A top or uppermost portion of each conductive bump is then planarized. The exposed portions of a main surface of the semiconductor wafer are filled with a layer of encapsulation material. The conductive bumps are reformed to their preplanarized shape and the semiconductor wafer is then diced to form singulated semiconductor dice. A preferred method of the invention also includes placing each singulated die in a mold to complete a second encapsulation step wherein a layer of encapsulation material is formed on the back surface or, alternatively, on the back and side surfaces of the semiconductor die in order to encapsulate the back, or the back and sides, of the semiconductor die.

Abstract: A method for bonding a component (14) to a substrate (18) via a thermally hardened or softened bonding medium, employs PTC or NTC thermistor (24) for heating the bonding medium during bonding of the component. In one disclosed example, the method is used for bonding an optical fiber to a substrate, via a solder layer (40), in alignment with a semiconductor laser (12) in a diode-laser module (10).